In this study, a split-gate resurf stepped oxide with a floating electrode (FSGRSO) UMOSFET has been proposed. The source in the trench is divided into two electrodes, namely: the upper electrode and the lower electrode. The upper one is the floating electrode, which redistributes the electric potential vertically, and improves the breakdown voltage and figure of merit (FOM). The breakdown (BV) and FOM of the FSGRSO UMOSFET have been improved up to 27.3% and 62.7%, respectively, compared with the SGRSO UMOSFET, according to the simulation results.
In this paper, a split-gate resurf stepped oxide with double floating electrodes (DFSGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) is proposed. The floating electrodes are symmetrically distributed on both sides of the source electrode in the trench. The performance of the DFSGRSO UMOSFET with different size of floating electrodes is simulated and analyzed. The simulation results reveal that the floating electrodes can modulate the distribution of the electric field in the drift area, improving the performance of the device significantly. The breakdown voltage (BV) and figure of merit (FOM) of the DFSGRSO UMOSFET at optimal parameters are 23.6% and 53.1% higher than that of the conventional structure. In addition, the regulatory mechanism of the floating electrodes is analyzed. The electric field moves from the bottom of the trench to the middle of the drift area, which brings a new electric field peak. Therefore, the distribution of the electric field is more uniform for the DFSGRSO UMOSFET compared with the conventional structure.
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