An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET

Chen, Runze; Wang, Lixin; Jiu, Naixia; Zhang, Hongkai; Guo, Min

doi:10.3390/electronics9050745

Cited by 2 publications

(4 citation statements)

References 27 publications

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“…However, the counterpart of CSGT-MOS is located at the bottom trench. The peak electric field in the middle of the drift region is helpful to redistribute the electric field [12][13][14][15], and thus a more uniform electric field is formed in the HKP SGT-MOS and SSGT-MOS. It is clear that the electric field of HKP SGT-MOS decreases much more slowly than that of the SSGT-OS from the position of peak electric field to the N + substrate due to the reshape effect of the high-k pillar.…”

Section: Structure and Mechanismsmentioning

confidence: 99%

“…From this point, the BV and FOM are enhanced as the W P increases. Once the W P is larger than 1.2 µm, the influence of the assisted depletion effect is enhanced, and the electric field lines which are induced by the ionized impurities in the drift region tend to terminate at the split gate rather than the P-body, which weakens the peak electric field in the P-body/drift region junction [13][14][15]. As a result, the average value of the vertical electric field is mitigated and thus the BV decreases.…”

Section: Influence Of the Split-gate Width (W P )mentioning

confidence: 99%

“…By keeping the upper split gate floating and the bottom split gate grounded [14], the BV and the figure of merit (FOM) are effectively enhanced by the vertically redistributed electric potential. In addition, an SGT structure with double floating electrodes located on both sides of the split gate in the trench is presented [15]. The floating electrodes modulate the distribution of the electric field in the drift region; thus, a larger BV is achieved.…”

Section: Introductionmentioning

confidence: 99%

“…Since the high-k pillar is a dielectric material, there is no instability issue compared to the floating structure. Relatively speaking, the process of the proposed device is not as complicated as [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

Huang,

Li,

Sun

et al. 2024

Semicond. Sci. Technol.

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In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.

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Section: Structure and Mechanismsmentioning

confidence: 99%

Section: Influence Of the Split-gate Width (W P )mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

Huang,

Li,

Sun

et al. 2024

Semicond. Sci. Technol.

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Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistor

Su,

Wang,

Yang

et al. 2023

Acta Phys. Sin.

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SGT-MOSFET introduces a longitudinal shielding gate connected to the source inside the body, which can assist in depleting the drift region. Its voltage withstand principle is different from traditional VUMOSFET. SGT-MOSFET will generate two electric field peaks inside the body, which will further optimize the electric field strength distribution of the device and increase the breakdown voltage of the device. Therefore, SGT-MOSFET not only has the advantages of low conduction loss of CCMOSFET, but also has lower switching loss. The influence of structural parameters such as the width of the mesa, the thickness of the field oxygen, the depth of the trench and the doping concentration on the electric field strength distribution of SGT-MOSFET is not independent of each other. The more parameters are, the more complex the correlation of their influence on the electric field strength distribution is. In this paper, 110V SGT-MOSFET is taken as the research object. Through numerical simulation, theoretical analysis and analytical modeling, the withstand voltage principle of different structures and the correlation between structural parameters and electric field strength distribution are studied; the analytical model of the electric field related to various structural parameters of the device is established, which provides a theoretical basis for the design of the device structure. The analytical model of electric field under low current is modified by introducing avalanche carriers, so that the modified analytical results can better match the simulation results. The field oxygen thickness at the optimal electric field is extracted as 0.68µm by the modified analytical model of the electric field. Compared with the product of SGTMOSFET with 0.58µm field oxygen thickness, at the optimal field oxygen thickness of 0.68µm, the on-resistance of the device is reduced because the on-area of the device is increased; the electric field distribution is more uniform, so the device breakdown voltage increases; the gate-source capacitance decreases and the gate-drain capacitance is almost no change, so the gate-source charge decreases and the gate-drain charge is almost no change, while the total gate charge decreases. As a result, the optimal value parameter FOM<sub>1</sub> of the device is increased by 18.9%, and the optimal value parameter FOM<sub>2</sub> is reduced by 8.5%. Therefore, the static and dynamic characteristics of the device are significantly promoted, and the performance of the corresponding products is greatly improved.

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An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET

Cited by 2 publications

References 27 publications

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistor

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