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NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.1608488Applied Physics Letters, 83, 13, pp. 2638Letters, 83, 13, pp. -2640Letters, 83, 13, pp. , 2003 Interfacial growth in HfO x N y gate dielectrics deposited using †"C 2 H 5 … 2 N ‡ The interface growth by oxygen diffusion has been investigated for 5 nm thick HfO x N y gate-quality dielectric films deposited on Si͑100͒ by low-pressure pulsed metalorganic chemical vapor deposition. Analysis by x-ray photoelectron spectroscopy of the films deposited using the precursor tetrakis ͑diethylamido͒ hafnium with O 2 showed that the films contained 4 at. % nitrogen. This increased to 11 at. % N when NO was used as the oxidant. Significant growth of the interface layer was observed for films exposed to air at ambient temperature and lower rates of growth were observed for vacuum annealed films and those with the higher N content. For films annealed in O 2 at temperatures in the range 600-900°C, the activation energies of the interfacial growth were 0.36 and 0.25 eV for N concentrations of 11 and 4 at. %, respectively. The results were interpreted in terms of atomic oxygen formation in the bulk and reaction at the interface. The increase in N incorporation from 4 to 11 at. % increases the crystallization temperature from between 500 and 600°C to between 600 and 700°C. Hafnium oxide has proven to be one of the most promising candidates to replace SiO 2 as the gate insulator in sub-0.1-m complementary metal oxide semiconductor ͑CMOS͒ devices due to its relatively high dielectric constant and thermodynamic stability when in direct contact with Si.1,2 However, the high oxygen diffusion rate through hafnium oxide, 3 whic...
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