Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

Abstract

NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744313&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744313&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.1608488Applied Physics Letters, 83, 13, pp. 2638Letters, 83, 13, pp. -2640Letters, 83, 13, pp. , 2003 Interfacial growth in HfO x N y gate dielectrics deposited using †"C 2 H 5 … 2 N ‡ The interface growth by oxygen diffusion has been investigated for 5 nm thick HfO x N y gate-quality dielectric films deposited on Si͑100͒ by low-pressure pulsed metalorganic chemical vapor deposition. Analysis by x-ray photoelectron spectroscopy of the films deposited using the precursor tetrakis ͑diethylamido͒ hafnium with O 2 showed that the films contained 4 at. % nitrogen. This increased to 11 at. % N when NO was used as the oxidant. Significant growth of the interface layer was observed for films exposed to air at ambient temperature and lower rates of growth were observed for vacuum annealed films and those with the higher N content. For films annealed in O 2 at temperatures in the range 600-900°C, the activation energies of the interfacial growth were 0.36 and 0.25 eV for N concentrations of 11 and 4 at. %, respectively. The results were interpreted in terms of atomic oxygen formation in the bulk and reaction at the interface. The increase in N incorporation from 4 to 11 at. % increases the crystallization temperature from between 500 and 600°C to between 600 and 700°C. Hafnium oxide has proven to be one of the most promising candidates to replace SiO 2 as the gate insulator in sub-0.1-m complementary metal oxide semiconductor ͑CMOS͒ devices due to its relatively high dielectric constant and thermodynamic stability when in direct contact with Si.1,2 However, the high oxygen diffusion rate through hafnium oxide, 3 whic...

Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors

“…Among the many high-k materials available, those based on Hf and its nitride exhibit low leakage currents and high carrier mobility. Currently, sputtering and or metal organic chemical vapor deposition methods are used for the high-k film formation [3][4][5][6][7][8][9]. Furthermore, the very thin Hf-silicate layers on the top of HfO 2 gate structures are very important in obtaining good electrical properties, because these surface films prevent a reaction between the poly-silicon electrodes and HfO 2 films during high temperature activation annealing [10].…”

Electrical properties of 0.5 nm thick Hf-silicate top-layer∕HfO2 gate dielectrics by atomic layer deposition

“…Currently, sputtering and or metal organic chemical vapor deposition methods are used for the high-k film formation. [3][4][5][6][7][8][9][10][11] Among many high-k film deposition techniques, 12-19 atomic layer deposition ͑ALD͒ technology is desirable for precise control of composition, film thickness, conformality, and uniformity. Hafnium-tetrachloride ͑HfCl 4 ͒ and water ͑H 2 O͒ have been widely used for the ALD HfO 2 film formation.…”

Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition

“…In a previous report on CVD HfO 2 gate oxide, the activation energy of interlayer formation during air exposure was higher for a film deposited by NO than O 2 , attributed to the reduced oxygen diffusion by higher nitrogen content. 8 The thinner interlayer by nitrogen incorporation can lead to a smaller equivalent oxide thickness, which is beneficial to device scaling.…”