Electrical property improvements of high-k gate oxide by <i>in situ</i> nitrogen incorporation during atomic layer deposition

Maeng, W. J.; Lim, Sung-Soo; Kwon, Soon Ju; Kim, H.

doi:10.1063/1.2472189

Cited by 14 publications

(8 citation statements)

References 17 publications

(14 reference statements)

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“…The amount of nitrogen is expected to strongly influence the electrical properties, as demonstrated for Si and Ge MOS devices. [55][56][57][58][59][60] It was observed that nitrogen incorporation effectively improved the Si device property and reliability; however, excess nitrogen led to unfavorable interface charge and reduced mobility. [55][56][57][58][59] Regarding the Ge MOS device, low nitrogen contents reduced D it at the MOS interface, whereas excess nitrogen degraded the interface.…”

Section: -9mentioning

confidence: 99%

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

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Section: -9mentioning

confidence: 99%

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

et al. 2015

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“…The alkylamides of Ta and Nb have been used for the MOCVD of TaN and NbTaO (1– x ) N y . The Ta amides also have been used for ALD of Ta 2 O 5 and TaO x N y , but there have been only a couple of reports where metal amides of Ta were used for MOCVD of Ta 2 O 5 . To our knowledge, there has been no report solely on the MOCVD of Nb 2 O 5 using niobium alkylamides, apart from its application for growing NbTaO (1– x ) N y films by MOCVD .…”

Section: Introductionmentioning

confidence: 99%

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

et al. 2007

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The stabilization of the reactive amide complexes of niobium and tantalum with malonates as chelating ligands leads to stable six-coordinated monomeric complexes ([M(NMe2)4(dbml)]; M = Nb, Ta), namely tetrakis(dimethylamido)(di-tert-butylmalonato)niobium(V) (1) and tetrakis(dimethylamido)(di-tert-butylmalonato)tantalum(V) (2). Compounds 1 and 2 were characterized by 1H NMR, 13C NMR, EI-mass spectroscopy, elemental analysis, and single-crystal X-ray diffraction studies. The thermal properties of the compounds were studied by thermogravimetric analysis. Both the complexes possess good thermal characteristics, improved resistance to air and moisture, and high solubility and stability in solvents compared to their respective parent alkyl amides. Compound 1 was studied for metalorganic chemical vapor deposition (MOCVD) of Nb2O5 while compound 2 was studied for liquid injection metalorganic chemical vapor deposition (LI-MOCVD) of Ta2O5 thin films. The films were deposited at substrate temperatures from 400 to 800 °C, and for both Nb2O5 and Ta2O5 the maximum growth rate was at 600 °C. The films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy for their crystallinity and morphology. Thin film composition was analyzed by X-ray photoelectron spectroscopy, Rutherford backscattering, and depth profiling the composition with secondary neutral mass spectrometry. Electrical properties of the films were studied in terms of the C–V characteristics.

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“…The dielectric breakdown characteristics were also improved by in situ nitridation during ALD. Improved breakdown characteristics were also observed in the high-k film grown using lowtemperature N 2 /O 2 mixture plasma and NH 4 OH/H 2 O vapor [58,59]. The SIMS depth profiles in Figure 4.18 show that the C impurity concentration was reduced by the in situ NH 3 pulse.…”

Section: Reactants For In Situ N Incorporationmentioning

confidence: 85%

“…In addition, the nitrogen in the high-k film suppresses the leakage current density by passivating the electrical defects and improves the thermal stability, such as Si out-diffusion and crystallization temperature. The use of a reactant containing nitrogen, such as NH 3 , NH 4 OH, and low-temperature N 2 /O 2 mixture plasma enables to control the nitrogen profile in a high-k film without a high thermal budget and plasma damage during ALD growth [57][58][59][60]. On the other hand, the high thermal budget, serious plasma damage and excessive nitrogen incorporation at the interface by these postdeposition nitridation technique result in mobility degradation and impaired reliability [53,54].…”

Section: Reactants For In Situ N Incorporationmentioning

confidence: 99%

Atomic Layer Deposition Process of Hf‐Based High‐ k Gate Dielectric Film on Si Substrate

Park

Cho

Jung

et al. 2012

High‐k Gate Dielectrics for CMOS Technology

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Hf-based gate dielectrics with a metal gate have been implemented in the mass production of state-of-the-art complementary metal oxide semiconductor field effect transistors (CMOSFETs) because SiO 2 gate dielectrics have already reached their physical limit due to the high leakage current and reliability concerns [1]. With this radical change in the gate dielectric material, other related materials, such as gate metal and spacers, as well as integration processes have also undergone unprecedented innovation over the past decade. There are several other notable changes in characterizing the device properties, which are still highly important research areas in microelectronics and are discussed in other chapters of this book.Some of the critical issues and related material processing are closely related to the material properties of high-k dielectric films, which are determined largely by the processing conditions of thin films. Atomic layer deposition (ALD) has been the industry standard process of the high-k gate dielectrics as well as several related materials. The merits of ALD include accurate thickness control, low thermal budget, good uniformity, and conformality. The conformality has not been the critical requirement for conventional planar MOSFETs but its importance is increasing as the three-dimensional structures, e.g., FinFET, are gaining more focus. The low thermal budget is another merit of ALD compared to chemical vapor deposition (CVD), particularly the gate-last integration scheme.ALD of high-k oxide films proceeds by alternately exposing the substrates to precursor and oxygen source that undergo self-terminating reactions with each other on the substrate surface. The metal half-cycle of ALD involves exposure of the growth surface to a gas-phase Hf precursor. After a purge of the reactor, the substrate is exposed to the oxygen source, which is followed by a subsequent purge, resulting in the formation of HfO 2 films. The thickness of the HfO 2 films can be controlled by repeating this reaction cycle. The selection of Hf precursor and oxygen source strongly affects the physical and electrical properties of the ALD HfO 2 films. As the High-k Gate Dielectrics for CMOS Technology, First Edition. Edited by Gang He and Zhaoqi Sun. ALD depends more on the specific chemistry and reaction route, compared to CVD. As ALD has evolved rapidly over the past several decades (ALD was first suggested by Professor Suntola in the early 1980s. [2]), a wide range of chemistry has become available, including inorganic and organic precursors.This chapter examines the issues related to the ALD processes of HfO 2 -based dielectric materials. The topics include the film properties and interactions with the Si substrate depending on the types of Hf precursor and oxygen sources. Although some chemistry aspects of ALD process itself are discussed but not mainly focused in this chapter. This chapter shows that various structural, physicochemical, and electrical characteristics of dielectric films are closely related to the deta...

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Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition

Cited by 14 publications

References 17 publications

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition

Atomic Layer Deposition Process of Hf‐Based High‐ k Gate Dielectric Film on Si Substrate

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