A SiC CMOS Linear Voltage Regulator for High-Temperature Applications

Murphree, Robert; Roy, Sajib; Ahmed, Shamim; Barlow, M.; Rahman, Ashfaqur; Francis, A. Matthew; Holmes, James; Mantooth, H. Alan; Di, Jia

doi:10.1109/tpel.2019.2914169

Cited by 22 publications

(5 citation statements)

References 26 publications

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“…With material and process improvement, Raytheon Systems Limited (RSL) developed a 1.2-µm 4H-SiC complementary-MOS (CMOS) process (HiTSiC) along with its process design kit (PDK) [7]. Since then, a variety of SiC CMOS circuits have been demonstrated with the HiTSiC process [3], [8]- [13]. Recently, Murphree et al demonstrated a SiC linear voltage regulator that offers competitive performance to Texas Instrument's silicon-based linear regulators [13].…”

Section: Introductionmentioning

confidence: 99%

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SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Liu

Zhang

Isukapati

et al. 2022

IEEE J. Electron Devices Soc.

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Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600 V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.

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Section: Introductionmentioning

confidence: 99%

“…Since then, a variety of SiC CMOS circuits have been demonstrated with the HiTSiC process [3], [8]- [13]. Recently, Murphree et al demonstrated a SiC linear voltage regulator that offers competitive performance to Texas Instrument's silicon-based linear regulators [13].…”

Section: Introductionmentioning

confidence: 99%

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Liu

Zhang

Isukapati

et al. 2022

IEEE J. Electron Devices Soc.

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“…diodes have been commercialized and widely used in power electronic systems [4][5][6][7][8]. Along with the development of SiC power devices, SiC materials and process technologies have also been continuously improved, and the SiC complementary metal oxide semiconductors, JFETs and bipolar junction transistor integrated circuits have gradually emerged and are used in high-temperature applications [9][10][11][12][13]. At the same time, SiC-based power integrated circuit technology has also received much attention and is now a hot research topic [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance

Kong¹,

Duan²,

Gao³

et al. 2022

Semicond. Sci. Technol.

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A novel optimum variation lateral doping 4H-SiC lateral double-diffused metal-oxide- semiconductor field-effect transistor (LDMOS) with improved performance is proposed and numerical simulation investigated in this article. As for the proposed 4H-SiC LDMOS, an optimized three-stage variation of lateral doping (VLD) p-top layer is employed in the drift region, thus the doping concentration of the n-drift region can be significant increased, resulting an ultra-low specific resistance (Ron,sp). The breakdown voltage (BV) is also improved, since the electric field distribution of the drift region is optimized. Besides, the current saturation characteristic, gate-drain capacitance (CGD) and gate-to-drain charge (Qgd) of the proposed device are all improved, thanks to the effect of the source connected p-top region. Compared with the conventional LDMOS, the numerical simulation results show that the BV, Ron,sp and Qgd of the proposed LDMOS are improved by more than 11.9%, 47.3% and 46.3%, respectively. And the three-dimensional simulation result indicates that the entire three-stage p-top VLD layer can be performed by one-time fabrication process, which brings great convenience to future production.

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“…The recent SiC devices function as not only switching elements of main circuits, but also various gate drive circuits [17,18,19]. In addition, several researchers focused on SiC integrated circuits with CMOS designs [17,20,21,22,23,24,25]. Recently, M. Barlow et al realized experimental turn-on and turn-off switching speeds of about 24 V/ns and −30 V/ns, respectively, at room temperature and a DC bus voltage of 300 V using a SiC CMOS gate driver [17].…”

Section: Introductionmentioning

confidence: 99%

High-speed switching operation for a SiC CMOS and power module

Yao

Okamoto

Kato

et al. 2021

IEICE Electron. Express

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This paper deals with the high-speed switching operation of a main circuit when using a silicon carbide (SiC) complementary metaloxide semiconductor (CMOS) and power module for the high-speed drive. When using the developed power module and SiC CMOS gate buffer, we experimentally achieved the turn-on and turn-of switching speeds of about −100 and 80 V/ns at a DC bus voltage of 600 V and a load current of 20 A. Based on the I-V characteristics of the developed SiC CMOS and the gate charge of the SiC power MOSFET, the approximate switching time was calculated.

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A SiC CMOS Linear Voltage Regulator for High-Temperature Applications

Cited by 22 publications

References 26 publications

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance

High-speed switching operation for a SiC CMOS and power module

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