Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga2O3 heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga2O3, bipolar transport can induce conductivity modulation and low resistance in a low doping Ga2O3 material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm2, power figure-of-merit of 13.2 GW/cm2, and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics applications.

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A new SiC trench MOSFET (T-MOSFET) integrated with a side-wall Schottky Barrier Diode (SBD) to form a compact power device is proposed. The proposed structure applies two trenches to form the n-channel and SBD in a single cell, respectively. A P + is implanted after etching the trenches to form a shield for both the gate oxide and the Schottky barrier. The breakdown voltage of the proposed one is about 363% larger than that of the conventional trench MOSFET (CT-MOSFET) with integrated SBD. The integrated SBD of the proposed T-MOSFET exhibits an ultra-low leakage current (1 µA/cm 2 ) and low forward voltage drop (V on_diode ≈ 0.9 V), as well as low reverse recovery charge (Q rr = 0.73 µC/cm 2 ).

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