An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field Oxide

Wu, Jiayu; Kong, Moufu; Yi, Bo; Chen, Xing Bi

doi:10.1109/ted.2019.2898232

Cited by 9 publications

(6 citation statements)

References 17 publications

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“…B. Moreover, the proposed one exhibits a better tradeoff between V on and E off than those of the recently reported data [11], [16].…”

Section: Transient Characteristicsmentioning

confidence: 68%

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Lin

et al. 2019

IEEE J. Electron Devices Soc.

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An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore, the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the off-state. Thus, the doping concentration of the carrier-stored layer (N cs ) can be significantly improved without compromising the breakdown voltage. Hence, an ultra-low on-state voltage drop (V on ) can be obtained. Besides, the two series-connected diodes clamp the drain-to-source voltage of the intrinsic n-MOS in the TLIGBT, which leads to an ultra-low saturation current and improves the short-circuit withstand capability. The simulation results indicate that the turn-off loss (E off ) at V on = 1.37 V is reduced by 28.8% and 21% compared with those of the conventional carrier-stored LIGBT A and LIGBT B, respectively. Moreover, the saturation current density is reduced by over 53.3% and the short circuit withstand time is improved by more than 2 times than those of the conventional and state-of-the-arts.INDEX TERMS LIGBT, on-state voltage drop, saturation current density, turn-off loss, injection enhanced.

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“…B. Moreover, the proposed one exhibits a better tradeoff between V on and E off than those of the recently reported data [11], [16].…”

Section: Transient Characteristicsmentioning

confidence: 68%

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Lin

et al. 2019

IEEE J. Electron Devices Soc.

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“…, for different LIGBTs at V on ≈1.35 V. It shows that the proposed one has a FOM about two times larger than those of the state-of-the-arts [17,18]. Besides, the FOM of the proposed one is improved by 41.8% and 25.3% compared with those of the TLIGBT-A and TLIGBT-B, respectively.…”

Section: Transient Characteristicsmentioning

confidence: 88%

“…Figure 10 compares the trade-off between V on and E off for different LIGBTs. Firstly, due to the optimized N-drift region, the length of the drift region is shorter than those of the LIGBTs [17,18] with an approximate BV (about 340 V). Besides, due to the shielding effect of the trench and P-shield layer, the N CS of the TLIGBT-A and TLIGBT-B reaches 1×10 16 cm −3 and 1×10 17 cm −3 , respectively.…”

Section: Transient Characteristicsmentioning

confidence: 99%

Simulation study of a novel thin layer SOI carrier-stored TLIGBT with self-biased pMOS

Yi¹,

Lin²,

Hu³

et al. 2019

Semicond. Sci. Technol.

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A novel thin layer Silicon-On-Insulator (SOI) carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with P-shield layer and self-biased pMOS is proposed. The potential of the P-shield layer is clamped by the self-biased pMOS, which transfers the reverse voltagesustaining position from the P-base/carrier-stored layer (CSL) junction to the P-shield/N-drift junction during the off-state. Therefore, the doping concentration of the CSL (N CS ) can be increased by several orders of magnitude to decrease the on-state voltage drop (V on ) without jeopardizing the breakdown voltage. Moreover, the self-biased pMOS shunts most of the hole current during on-state when the voltage of the collector is further increased, which clamps the drain-to-source voltage of the intrinsic nMOS. Then, low saturation current and large forward biased safe operating area are obtained for the proposed TLIGBT. The simulation results reveals that the turn-off loss (E off ) of the proposed TLIGBT at V on ≈1.35 V is reduced by 25.4% and 41.9% compared with those of the conventional TLIGBT A and conventional TLIGBT B, respectively. Besides, the saturation current density of the proposed TLIGBT is reduced by over 44% compared with those of the conventional ones. Consequently, the short-circuit withstand time is improved by over 164%.

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“…In order to avoid voltage snapback and keep the advantage of SA structure, the high fixed anode resistance can be obtained by extending or compressing the electron flowing path, which ensures the normal hole injection process. For example, the further proposed separated shorted-anode (SSA) structure [16,17,18,19,20], and the trench barriers and shorted anode (TBSA) structure [21,22] realize the suppression of voltage snapback phenomenon, but also brings higher drift resistance and larger chip area. After that, the NPN controlled anode (SA NPN) structure [23,24,25], and the trench/planar gate and integrated Schottky barrier diode (TP-SBD) structure [26,27] have achieved completely snapback-free ability by introducing extra fixed turn-on voltage for SA structure, but it also leads to the weakening of the conductivity modulation ability of the device.…”

Section: Introductionmentioning

confidence: 99%

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

Wang

Sun

Duan

et al. 2022

IEICE Electron. Express

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In this work, we evaluated a novel low loss and snapbackfree silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) by numerical simulation, which utilizes the inherent junction self-built potential (JSBP) to form depletion region at the anode. When the anode voltage (VAC) is less than built-in potential (Vbi), the introduced electron flowing channel between P-anode pillars is occupied by the depletion region, which hinders electron current from flowing into N-anode and limits the device to working in MOS mode. Furthermore, due to the offset effect for the JSBP by higher VAC, the depletion region disappears and the anode PN junction turns on, which makes the device work in IGBT mode forming normal electron and hole current. At the same forward voltage drop (VF) of 1.64V, extra electron flowing channel makes the turn-off loss (Eoff) of proposed JSBP LIGBT 22.1% lower than that of conventional (Conv.) LIGBT. Moreover, considering to the same Eoff of 0.3mJ/cm 2 , the depletion region with low VAC contributes to relatively enhanced conductivity modulation, which makes VF of proposed JSBP LIGBT reduce by 19.6% compared to separated shorted-anode (SSA) LIGBT, while also completely eliminates snapback effect. Therefore, the proposed JSBP LIGBT gains the best trade-off performance between VF and Eoff.

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An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field Oxide

Cited by 9 publications

References 17 publications

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Simulation study of a novel thin layer SOI carrier-stored TLIGBT with self-biased pMOS

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

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