A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes

Hu, Huan; Kong, Moufu; Wu, Jiayu; Yi, Bo; Chen, Xing Bi

doi:10.1109/ted.2019.2936515

Cited by 19 publications

(7 citation statements)

References 15 publications

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“…Here, the tradeoff relationship between forward voltage drop (Von) and turn-off loss (Eoff) limits the development of LIGBTs [5][6][7][8][9]. To address this issue, the shorted anode (SA) LIGBT is proposed to reduce the Eoff by providing an additional electron extraction path of the N+ anode [10][11][12][13]. However, several drawbacks, especially an undesirable snapback phenomenon and high forward voltage drop (Von) are induced by the short effect of the N+ anode, which can prevent the device from full turnon and induce large conducting energy loss, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…However, several drawbacks, especially an undesirable snapback phenomenon and high forward voltage drop (Von) are induced by the short effect of the N+ anode, which can prevent the device from full turnon and induce large conducting energy loss, respectively. [13][14][15]. Many advanced structures have been proposed to solve these issues in recent years.…”

Section: Introductionmentioning

confidence: 99%

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A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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A novel snapback-free and fast-switching Shorted-Anode Lateral Insulated Gate Transistor (SA LIGBT) with Multiple Current P-Plugs (MCP) in anode, named MCP LIGBT, is proposed and investigated. The device features Multiple separated Current P-Plugs which are inserted in the N-buffer. At the forward conduction mode, the MCP act as the potential barrier to block the electrons flowing directly to the N+ anode, and the N-channels sandwiched between the MCP are fully depleted, which both increase the anode distributed resistance (RSA). In the turn off process, the N-channels provide three high-speed paths for minorities extraction, which reduces the turn off time. Consequently, the proposed device not only eliminates the snapback effect, but also achieves superior tradeoff between Eoff and Von. At the same

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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“…In order to avoid voltage snapback and keep the advantage of SA structure, the high fixed anode resistance can be obtained by extending or compressing the electron flowing path, which ensures the normal hole injection process. For example, the further proposed separated shorted-anode (SSA) structure [16,17,18,19,20], and the trench barriers and shorted anode (TBSA) structure [21,22] realize the suppression of voltage snapback phenomenon, but also brings higher drift resistance and larger chip area. After that, the NPN controlled anode (SA NPN) structure [23,24,25], and the trench/planar gate and integrated Schottky barrier diode (TP-SBD) structure [26,27] have achieved completely snapback-free ability by introducing extra fixed turn-on voltage for SA structure, but it also leads to the weakening of the conductivity modulation ability of the device.…”

Section: Introductionmentioning

confidence: 99%

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

Wang

Sun

Duan

et al. 2022

IEICE Electron. Express

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In this work, we evaluated a novel low loss and snapbackfree silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) by numerical simulation, which utilizes the inherent junction self-built potential (JSBP) to form depletion region at the anode. When the anode voltage (VAC) is less than built-in potential (Vbi), the introduced electron flowing channel between P-anode pillars is occupied by the depletion region, which hinders electron current from flowing into N-anode and limits the device to working in MOS mode. Furthermore, due to the offset effect for the JSBP by higher VAC, the depletion region disappears and the anode PN junction turns on, which makes the device work in IGBT mode forming normal electron and hole current. At the same forward voltage drop (VF) of 1.64V, extra electron flowing channel makes the turn-off loss (Eoff) of proposed JSBP LIGBT 22.1% lower than that of conventional (Conv.) LIGBT. Moreover, considering to the same Eoff of 0.3mJ/cm 2 , the depletion region with low VAC contributes to relatively enhanced conductivity modulation, which makes VF of proposed JSBP LIGBT reduce by 19.6% compared to separated shorted-anode (SSA) LIGBT, while also completely eliminates snapback effect. Therefore, the proposed JSBP LIGBT gains the best trade-off performance between VF and Eoff.

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“…Compared with unipolar devices, both the electrons and holes of LIGBT are involved in conduction in the onstate, which leads to a relatively lower forward conduction voltage drop (VON), but also leads to a long tail of turn-off current resulting in a high turn-off loss (EOFF) when the excess carriers can only disappear through recombination [9,10,11,12,13]. The turn-off loss can be reduced by reducing the hole injection efficiency of P+ anode, but this will also reduce the conductivity modulation effect and increase VON, so it is difficult to take both into account [14,15,16,17]. A better tradeoff can be achieved by changing the internal structure of the device, such as adding additional NPN electron extraction channels during turnoff [18,19,20].…”

Section: Introductionmentioning

confidence: 99%

A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels

Wang

Zhang

Jian

et al. 2022

IEICE Electron. Express

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In this paper, a snapback-free and fast-switching SOI LIGBT with three electron extracting channels (TEC) is proposed and investigated. Compared with SBM LIGBT, the trench gate of n-MOS is changed to a planar gate, and a P-region is added to prevent N+ short circuit while providing electron extracting channel. Simulation results show that TEC decreases EOFF by 15% at VON =1.8V relative to SBM when all three channels are open, while TEC still decreases EOFF by 10% at VON =1.55V relative to SBM when only two channels are available. The device achieves the same breakdown voltage level of 603V as SBM without additional trench etch process required.

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A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes

Cited by 19 publications

References 15 publications

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Novel low loss and snapback-free SOI LIGBT controlled by anode junction self-built potential

A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels

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