SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Liu, Tianshi; Zhang, Hua; Isukapati, Sundar Babu; Ashik, Emran; Morgan, Adam J.; Lee, Bongmook; Sung, Woongje; Fayed, Ayman; White, M.H.; Agarwal, Anant

doi:10.1109/jeds.2022.3150364

Cited by 9 publications

(7 citation statements)

References 29 publications

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“…For example, the channel mobility of SiC p-channel MOSFETs is typically 10–14 cm 2 /Vs on a lightly doped n-body, and decreases to 4–6 cm 2 /Vs on a relatively heavily-doped body [ 45 , 46 ]. Nevertheless, various SiC CMOS ICs have successfully been demonstrated [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 ].…”

Section: Resultsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

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Section: Resultsmentioning

confidence: 99%

Emerging SiC Applications beyond Power Electronic Devices

et al. 2023

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“…The high-voltage NMOS has a breakdown voltage of 600V and the P + isolation region can also withstand 600V. [14][15] The low-voltage CMOS devices have a rating of 25V across all junctions, hence the name 25V-600V mixed-mode technology. All devices have a threshold voltage of around 10V.…”

Section: Overview Of the New Sic Technologymentioning

confidence: 99%

“…The next big development came in the mid-2000s with the development of a vertical SiC Power MOSFET structure with a 600V breakdown voltage. [9] Since it was a vertical structure, it was only suitable for unipolar switching applications [15], but this structure offered better mobility and on resistance characteristics which opened the door for future switching applications.…”

Section: Introductionmentioning

confidence: 99%

“…[10] A major breakthrough in integration of Power FETs with gate drivers monolithically in SiC came in 2021 with the development of a vertical Power IC which consisted of a vertical Power MOSFET and a CMOS gate buffer on the same die. [11] However, as mentioned previously, a vertical structure is not suitable for switching power converter applications [15] and hence, a new technology is needed. The next section explains the details of the new SiC technology and subsequent sections detail the schematic and layout design of the Buck Converter with simulation results.…”

Section: Introductionmentioning

confidence: 99%

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A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

Gupta

Zhang

Liu

et al. 2023

Preprint

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This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25V-600V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1µm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25V domain to the 400V domain which is the input voltage of the Buck Converter. The load current is 1A and the nominal output voltage is 100V thereby meaning that the output power is 100W. The switching frequency is up to 1MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.

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“…Silicon carbide [20][21][22][23] (SiC) as the third generation semiconductor material received increasingly concerns due to its excellent properties such as higher carrier saturation velocity [24], higher breakdown electric field [25], lager band gap [26] and higher mechanical hardness. In addition, SiC was almost transparent to the visible light [27] and operated in harsh environments (high-temperature and radioactive) [28]. Thus, SiC was widely applied in the fields of new energy automobile, aircraft engines [29], solar [30] and so on.…”

Section: Introductionmentioning

confidence: 99%

Study on the mechanism of glass-SiC-glass anodic bonding process

Cheng,

Hu,

Liu

et al. 2024

J. Micromech. Microeng.

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The connection of SiC to glass is important for the development of microelectromechanical systems. In the study, glass-SiC-glass with SiC as common anode was effectively bonded by using anodic bonding technology in atmosphere. The interfacial microstructure of bonded joints was analyzed by using SEM, EDS and TEM. The effect of the bonding voltage and bonding temperatures on the interfacial microstructure and mechanical property of glass/SiC/glass was investigated. The results indicated that a Na+ depletion layer formed in the glass adjacent to the SiC/glass interface due to the decomposition of Na2O compound in the glass and the migration of Na+ towards the upper surface of glass during anodic bonding. With elevating bonding temperatures or bonding voltages, the thickness of Na+ depletion layer was gradually increased and more O2- accumulated at the SiC/depletion layer interface, which was beneficial for the tensile strength of joints. But owing to the increased residual thermal stress, the tensile strength of the joints dropped with enhanced bonding temperature. The maximum tensile strength of the joint was about ~ 12.8 MPa when bonding at 450 ºС/1000 V/1 min. The joint mainly ruptured in the glass with a brittle fracture mode.

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SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Cited by 9 publications

References 29 publications

Emerging SiC Applications beyond Power Electronic Devices

Emerging SiC Applications beyond Power Electronic Devices

A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

Study on the mechanism of glass-SiC-glass anodic bonding process

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