Silicon carbide (SiC) power integrated circuit (IC) technology allows monolithic integration of 600 V lateral SiC power MOSFETs and low-voltage SiC CMOS devices. It enables application-specific SiC ICs with high power output and work under harsh (high-temperature and radioactive) environments compared to Si power ICs. This work presents the device characteristics, SPICE modeling, and SiC CMOS circuit demonstrations of the first two lots of the proposed SiC power IC technology. Level 3 SPICE models are created for the high-voltage lateral power MOSFETs and low-voltage CMOS devices. SiC ICs, such as the SiC CMOS inverter and ring oscillator, have been designed, packaged, and characterized. Proper operations of the circuits are demonstrated. The effects of the trapped interface charges on the characteristics of SiC MOSFETs and SiC ICs are also discussed.
an innovative algorithm for computer-aided circuit design is presented in this paper. The algorithm is applied to "relative" circuits during optimal circuit design process to reduce circuit simulation time. The new concepts of "relative" circuits, fundamental circuit, derivative circuit, and delta circuit, are introduced. A practical implementation approach is developed with a Spice simulator, accordingly. The algorithm can be adapted to statistical designs or optimal designs. An example is given to prove the correctness and efficiency of the algorithm.
Combined with actual situation of Fengxian power Supply Company, the neutral grounding modes of Fengxian 35 kV and 10 kV power grid are studied in the paper. The different frequencies injected method is used to measure the capacitive current of Fengxian 28 substations, and the neutral grounding modes of the 28 substations are determined based on the measured values of capacitive current.
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