Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxidesemiconductor field-effect transistors J. Appl. Phys. 112, 084501 (2012); 10.1063/1.4759354 Correlation between channel mobility and shallow interface traps in SiC metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 92, 6230 (2002); 10.1063/1.1513210Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (1120) face Appl.
The instability in the electrical properties of 4H-SiC(0001) C-face metal–oxide–semiconductor (MOS) systems processed by wet gate oxidation with H2 postoxidation annealing (POA) was characterized. Wet-oxidized 4H-SiC C-face MOS capacitors indicated a large flat-band voltage (Vfb) shift owing to gate-bias stressing, but a H2 POA process improved the Vfb shift significantly. The threshold voltage (Vth) shift of wet-oxidized 4H-SiC C-face MOS field-effect transistors was reduced greatly to one-tenth by using an appropriate H2 POA process. These samples also indicated a high channel mobility (µfe) of 70 cm2/(V·s). The coexistence of small Vth instability and high µfe was achieved.
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