A quantitative analysis of strong-beam α fringes from {110} antiphase boundaries in GaAs

Antiphase structures in a periodically inverted GaAs/AlGaAs waveguide investigated by transmission electron microscopy

“…From the above results, it is confirmed that the observed (011) boundaries are of antiphase character and the fringes are of the δ type originating from the unique displacement vector of the (011) antiphase boundary of GaAs caused by different lengths of Ga-Ga and As-As bonds. [31][32][33] In addition to the artificial (011) antiphase boundaries discussed above, we found unintentionally formed antiphase boundaries on the Ge interlayers. In our previous studies, 15,17) we investigated the self-annihilating antiphase domains observed by [011]-zone axis DF TEM, in which rather regular (base lengths of the domains were typically 50 nm) antiphase domains were formed as a result of intentionally introduced misorientation causing regular single-atomic-height steps.…”

“…From the above results, it is confirmed that the observed (011) boundaries are of antiphase character and the fringes are of the δ type originating from the unique displacement vector of the (011) antiphase boundary of GaAs caused by different lengths of Ga-Ga and As-As bonds. [31][32][33] In addition to the artificial (011) antiphase boundaries discussed above, we found unintentionally formed antiphase boundaries on the Ge interlayers. Figure 6 inverted (left) and noninverted (right) domains.…”

Structure of the (110) antiphase boundary in gallium phosphide

“…cation–anion bonds) (Holt, 1969). These properties may include high energies of formation (Van Vechten, 1975; Kraut & Harrison, 1984; Petroff, 1986), dissimilar bond lengths (Rasmussen et al ., 1991a) and uncompensated localized charge (Lambrecht et al ., 1992). In compound semiconductors, antisite bonds are expected to be present along all high‐order grain boundaries with the exception of the Σ = 3 {111} orthotwin boundary.…”

“…APBs have been studied in a number of different compound semiconductor crystals, including GaAs (Neave et al ., 1983; Cho et al ., 1985; Liliental‐Weber et al ., 1989; Rasmussen et al ., 1989, 1991a,b; Ueda et al ., 1989; McKernan et al ., 1991), SiC (Rasmussen et al ., 1989; Pirouz et al ., 1987a,b; Cheng et al ., 1989) and GaP (Morizane, 1977; Soga et al ., 1993; Samavedam et al ., 1995; Cohen & Carter, 1997). Experimental observations have shown that they may facet parallel to different crystallographic planes or they may be curved.…”

“…Electron‐diffraction studies of APBs suggest that two adjacent antiphase domains (APDs) are invariably related by a rigid‐body lattice translation, R , in addition to the inversion of the crystal polarity (Morizane, 1977; Cheng et al ., 1989; Rasmussen et al ., 1989, 1991a; McKernan et al ., 1991) The presence of this translation has been attributed to dissimilarities in the antisite bond lengths across the APB. The direction and magnitude of the translation state between APDs along {110} APB facets in GaAs (Rasmussen et al ., 1991a,b) has been studied using the α‐fringe contrast technique in strong‐beam diffraction‐contrast imaging. Similar techniques have been applied to the analysis of R at {111} facets in SiC (Rasmussen et al ., 1989) and GaAs (McKernan et al ., 1991).…”