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SummaryThe morphology of antiphase boundaries in GaP films grown by molecular beam epitaxy on Si (001) has been studied by transmission electron microscopy. The inversion of the crystal polarity between antiphase domains was confirmed by convergent-beam electron diffraction. The APBs were often found to facet parallel to {110} planes. Strong-beam α -fringe contrast observed along the (110) facets indicates that adjacent antiphase domains are related by an additional rigid-body lattice translation. Diffraction-contrast analysis shows that this R corresponds to a shear parallel to the [001] direction and a small expansion. The magnitude of the translation was inferred, quantitatively, through a comparison between energy-filtered zero-loss images of the α -fringe contrast with numerical calculations. The components of the rigid-body lattice translation were determined to be 0.023 ± 0.0033 nm in the [001] direction and 0.005 ± 0.002 nm in the !! 0 direction. Based upon a geometric model of the {110} antiphase boundary, the lengths of the Ga and P antisite bonds were calculated to be 254 ± 2 pm and 227 ± 4 pm, respectively.

: The measurement of absolute crystal polarity is crucial to understanding the structural properties of many planar defects in compound semiconductors. Grain boundaries, including twin boundaries, in the sphalerite lattice are uniquely characterized by the crystallographic misorientation of individual grains and the direction of the crystal polarity in domains adjoining the grain boundary. To evaluate crystal polarity in gallium phosphide (GaP), asymmetrical interference contrast in convergent-beam electron-diffraction (CBED) patterns was used to ascertain the nature and direction of polar bonds. The direction of the asymmetry in the electron diffraction reflections was correlated with the crystal polarity of a sample with known polarity. The CBED technique was applied to determine the polar orientation of grains adjoining Sigma = 3 coherent and lateral twin boundaries in polycrystalline GaP.

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