Structure of the (110) antiphase boundary in gallium phosphide

Cohen, Dov; Carter, C. Barry

doi:10.1046/j.1365-2818.2002.01070.x

Cited by 29 publications

(33 citation statements)

References 74 publications

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“…These could be associated with the extended ordering domains clearly seen in the high magnification image, from the double-period, lattice fringes within the defect regions. A well-known type of stacking fault, called an antiphase boundary, typical of the growth of III-V semiconductors on group IV semiconductors, e.g., GaAs/Si or GaP/Si, 8,9 does not appear to be present, consistent with the conclusions from the RHEED and LEED measurements. These involve atoms from both sublattices and have a distinct contrast for different diffraction conditions.…”

Section: A Structural Propertiessupporting

confidence: 80%

Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Koveshnikov

Woltersdorf

Liu

et al. 2005

Journal of Applied Physics

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The structural and magnetic properties of NiMnSb films, 5-120 nm thick, grown on InGaAs/ InP͑001͒ substrates by molecular-beam epitaxy, were studied by x-ray diffraction, transmission electron microscopy ͑TEM͒, and ferromagnetic resonance ͑FMR͒ techniques. X-ray diffraction and TEM studies show that the NiMnSb films had the expected half-Heusler structure, and films up to 120 nm were pseudomorphically strained at the interface, greater than the critical thickness for this system, about 70 nm ͑0.6% mismatch to InP͒. No interfacial misfit dislocations were detected up to 85 nm, however, relaxation in the surface regions of films thicker than 40 nm was evident in x-ray reciprocal space maps. TEM investigations show that bulk, planar defects are present beginning in the thinnest film ͑10 nm͒. Their density remains constant but they gradually increase in size with increasing film thickness. By 40 nm these defects have overlapped to form a quasicontinuous network aligned closely with ͗100͘ in-plane directions. The associated strain fields and or compositional ordering from these defects introduced a reduction in crystal symmetry that influenced the magnetic properties. The in-plane and perpendicular FMR anisotropies are not well described by bulk and interface contributions. In thick films, the in-plane uniaxial and fourfold anisotropies increased with increasing film thickness. The lattice defects resulted in a large extrinsic magnetic damping caused by two-magnon scattering, an increase in the coersive field with increasing film thickness, and a lower magnetic moment ͑3.6 Bohr magnetons͒ compared to the expected value for the bulk crystals ͑4 Bohr magnetons͒.

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Section: A Structural Propertiessupporting

confidence: 80%

Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Koveshnikov

Woltersdorf

Liu

et al. 2005

Journal of Applied Physics

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“…Unfortunately, there is no explicit experimental evidences of what is a preferred plane for the annihilation of APB’s in GaAs and GaP. For example, various experimental studies [10, 12,13] suggest {111}, {331}, and {113} planes for annihilation of APB’s in GaP/Si. This indicates that the APB formation energy is only one of many factors which determine favorable conditions for the APB annihilation.…”

Section: Introductionmentioning

confidence: 99%

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Rubel

Baranovskiǐ

2009

IJMS

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Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}, and {113} antiphase boundaries in GaAs and GaP were studied theoretically using a full-potential linearized augmented plane-wave density-functional approach. Results of the study reveal that the stoichiometric {110} boundaries are the most energetically favorable in both compounds. The specific formation energy γ of the remaining antiphase boundaries increases in the order of γ{113} ≈ γ{112} < γ{111}, which suggests {113} and {112} as possible planes for faceting and annihilation of antiphase boundaries in GaAs and GaP.

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“…They are believed to be formed when the growth fronts of two spatially separated nucleation sites coalesce. PL measurements (see Complementary Information) show no emission from sub-bandgap states typically associated with defects though, proving the high quality of the material.Besides the lattice mismatch, the polarity mismatch between InP and silicon could lead to additional defects through the formation of anti-phase boundaries (APBs), which can extend vertically towards the top surface 32,33 . By initiating the growth from the flat <111> Silicon planes at the bottom of the trench the formation of such anti phase-domains is prevented and the TEM images showing that the grown InP is indeed APB-free 27 .…”

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confidence: 99%

Room-temperature InP distributed feedback laser array directly grown on silicon

et al. 2015

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These authors contributed equally to this work.Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective cointegration with photonic circuits and III-V FINFET logic.The potential of leveraging well-established and high yield manufacturing processes developed initially by the electronics industry has been the main driver fueling the massive research in silicon photonics over 2 the last decade [1][2][3][4][5][6] . From the start of its development though the lack of efficient optical amplifiers and laser sources monolithically integrated with the silicon platform inhibited the widespread adoption in high-volume applications. Solutions relying on flip-chipping prefabricated laser diodes 7,8 or bonding III-V epitaxial material [9][10][11] are now being deployed in commercially available optical interconnects but are less compatible with standard high-volume and low cost manufacturing processes. Approaches focusing on the engineering of group IV materials have achieved optical gain but still require extensive work to reach room temperature lasing at reasonable efficiency [12][13][14] . Therefore, the monolithic integration of direct bandgap III-V semiconductors, well known to be efficient light emitters, with the silicon photonics platform is heavily investigated. However, considerable hurdles need to be overcome. When directly growing III-V semiconductors on silicon substrates, the large lattice mismatch (εInP/Si = 8.06 %), the difference in thermal expansion and the different polarity of the materials result in large densities of crystalline defects including misfit and threading dislocations, twins, stacking faults and anti-phase boundaries, strongly degrading the performance and reducing the lifetime of any device fabricated in the as-grown layers 15 . Several routes to overcome these issues have been proposed. GaP-related materials can be grown on exact (001) silicon substrates with a small lattice mismatch and pulsed laser oscillation around 980 nm up to 120 K 16 has been achieved but shifting the laser...

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Structure of the (110) antiphase boundary in gallium phosphide

Cited by 29 publications

References 74 publications

Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Structural and magnetic properties of NiMnSb/InGaAs/InP(001)

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Room-temperature InP distributed feedback laser array directly grown on silicon

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