We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

No abstract

Carbon nanotubes produced in arcs have been found to have the form of multiwalled fullerenes, at least over short lengths. Sintering of the tubes to each other is the predominant source of defects that limit the utility of these otherwise perfect fullerene structures. The use of a water-cooled copper cathode minimized such defects, permitting nanotubes longer than 40 micrometers to be attached to macroscopic electrodes and extracted from the bulk deposit. A detailed mechanism that features the high electric field at (and field-emission from) open nanotube tips exposed to the arc plasma, and consequent positive feedback effects from the neutral gas and plasma, is proposed for tube growth in such arcs.

A novel dual-plasma system has been developed to combine the synthesis of silicon nanocrystals (Si-NCs), the etching to controllably tailor the Si-NC size, and the surface functionalization of Si-NCs into one simple all-gas-phase process. Si-NCs are synthesized in SiH(4)-based plasma; they then travel through CF(4)-based plasma, where Si-NCs are etched and passivated by C and F. The resulting Si-NCs exhibit air-stable emission across the full visible spectrum. Structural and optical characterization indicates that the emission in the red-to-green range is based on the recombination of quantum-confined excitons in Si-NCs, while the blue emission originates from defect states. The quantum yields of stabilized photoluminescence from Si-NCs range from 16% at the red end to 1% at the blue end.

Single-crystal nanoparticles of silicon, several tens of nm in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the synthesis nanocrystals of 2-10 nm diameter but larger particles were amorphous or polycrystalline.This work reports the use of a constricted, filamentary capacitively coupled low-pressure plasma to produce single-crystal silicon nanoparticles with diameters between 20-80 nm.Particles are highly oriented with predominant cubic shape. The particle size distribution is rather monodisperse. Electron microscopy studies confirm that the nanoparticles are highly oriented diamond-cubic silicon.8ZH .RUWVKDJHQ HW DO

No abstract

Individual nanoparticles of silicon and titanium having diameters in the range of 40-140 nm have been repeatedly compressed by a nanoindenter. Even at low loads, the small tip-particle and particle-substrate contacts generate extreme pressures within the confined particle, influencing its stiffness and fracture toughness. The effect of these high pressures on the measured modulus is taken into account by invoking a Murnaghan equation-of-state-based analysis. Fracture toughness of the silicon particles is found to increase by a factor of 4 in compression for a 40-nm-diam particle when compared to bulk silicon. Additionally, strain energy release rates increase by more than an order of magnitude for particles of this size when compared to bulk Si.

No abstract