By mildly oxidizing Cu foil and slowing down the gas flow rate, centimeter-sized single-crystalline graphene was grown on Cu at atmospheric pressure.

The combination of the high micropore surface area and the controlled mesopore size and mesopore/micropore ratio is responsible for high specific capacitance and excellent rate capability.

Biomimetic fabrication has long been considered a short cut to the rational design and production of artificial materials or devices that possess fascinating properties, just like natural creatures. Considering the fact that graphene exhibits a lot of exceptional properties in a wide range of scientific fields, biomimetic fabrication of graphene multiscale structures, denoted as biomimetic graphene, is of great interest in both fundamental research and industrial applications. Especially, the combination of graphene with biomimetic structures would realize structural and functional integrity, and thus bring a new opportunity of developing novel graphene-based devices with remarkable performance. In this feature article, we highlight the recent advances in biomimetic graphene films and their structure-defined properties. Functionalized graphene films with multiscale structures inspired from a wide range of biomaterials including rose petals, butterfly wings, nacre and honeycomb have been collected and presented. Moreover, both current challenges and future perspectives of biomimetic graphene are discussed. Although research of the so-called "biomimetic graphene" is still at an early stage, it might become a "hot topic" in the near future.

No abstract

No abstract

Dielectric film on graphene severely affects the performance of graphene field-effect transistors (GFETs). The authors investigated AlN dielectric film on graphene by Raman microscopy. AlN deposition led to the appearance of disorder-related peaks and to a wider Raman-active peak. The intensities of the disorder-related modes decreased exponentially with an increase in the layer number of graphene, indicating that AlN dielectric film mainly affected the surface of graphene. According to the experimental results, the authors suggested that few-layer graphene might be a better choice than single-layer graphene for the application of GFET.

Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next‐generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC‐MoS2) monolayer is reported on Au (111) film across a two‐inch c‐plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature‐guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

No abstract