Synthesis of large-area graphene on molybdenum foils by chemical vapor deposition

Wu, Yelong; Yu, Guanghui; Wang, Haomin; Wang, Bin; Chen, Zhiying; Zhang, Y.H.; Shi, Xiaoping; Xie, Xiaoming; Jin, Zhi; Liu, Xinyu

doi:10.1016/j.carbon.2012.07.007

Cited by 48 publications

(43 citation statements)

References 30 publications

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“…Only one peak was observed, which corresponds to two Gaussian peaks centered at 284.2 eV (graphitic sp2 carbon) and 286.2 eV (C-OH [hydroxyl]). For all three samples, the strongest peak is observed around 284.6 eV, which indicates the good stability of the graphene coating [10,18,25].…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 80%

“…The presence of Mo 2 C (carbide phase) peaks at 39.59° (101) and 52.31° (102) and the disappearance of Mo (110) indicate the presence of carbon atoms on the structure of the Mo foils as well as the precipitation of carbon onto the Mo surface [24]. The formation of carbide on the surface of Mo foils serves as an obstacle for the diffusion of more carbon onto the Mo surface; therefore, the deposited graphene is more uniform [18]. By comparing the XRD patterns of samples, it can be seen that the Mo 2 C peaks of sample 3 (at 1200°C) have an increased intensity compared to the other samples.…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…However, for Mo, finding the optimum temperature for the synthesis of high-quality graphene is still a challenge. In previous works that have used Mo foil, this temperature (1000°C) has typically been used [18,19].…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…However, the use of Mo as a catalyst for the production of graphene is still a new challenge. Wu et al [18] reported the synthesis of large-area graphene on Mo foils by using CVD. They reported that the cooling rate can be used to control the number of graphene layers.…”

Section: Introductionmentioning

confidence: 99%

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Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures

Naghdi¹,

Rhee²,

Kim³

et al. 2016

Carbon letters

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Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000°C, 1100°C, and 1200°C). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200°C. Additionally, a higher I 2D /I G ratio (0.418) was observed at 1200°C, which implies that there are fewer graphene layers at this temperature. The lowest I D /I G ratio (0.908) for the graphene layers was obtained at 1200°C, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.

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Section: X-ray Photoelectron Spectroscopymentioning

confidence: 80%

Section: X-ray Diffractionmentioning

confidence: 99%

Section: X-ray Diffractionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures

Naghdi¹,

Rhee²,

Kim³

et al. 2016

Carbon letters

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“…Hence, the CVD growth of graphene is often performed on a single-crystalline surface which functions as catalyst. Different metals have been studied for the catalytic growth of graphene including Ni [33], Cu [34][35][36][37], Mo [38], Pt [39], and Ru [40]. Single crystalline graphene with size up to 1 cm can be achieved on Cu substrate [37] and the film with~4 cm in size has been demonstrated on Cu-Ni alloy substrate with optimized conditions [41], as displayed in Figure 2a.…”

Section: Graphenementioning

confidence: 99%

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Sun¹,

Xu²,

Zhang³

et al. 2018

Crystals

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Two-dimensional (2D) semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal-oxide-semiconductor (CMOS) devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs), and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

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Synthesis of Layer‐Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejection Approach

Wang

Zhang

Liu

et al. 2015

Adv Funct Materials

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wileyonlinelibrary.comstructure and extraordinary physical properties. [1][2][3][4] To realize the potential of graphene in nanoelectronic devices, a uniform graphene layer with a well-controlled layer number should be synthesized fi rst because most of the physicochemical properties of graphene are sensitive to its thickness. For example, monolayer graphene has a zero band gap, whereas Bernal-stacked (AB-stacked) bilayer graphene is of signifi cant interest for graphene-based fi eld-effect transistors (FETs) and tunable laser diodes, [5][6][7] because of the feasibility to continuously tune up its band gap to 250 mV by applying a perpendicular electric fi eld. However, precise control of the thickness of graphene remains a major challenge. For the carbon-soluble materials (e.g., Ni, [ 8 ] Co, [ 9 ] Ru, [ 10 ] Pd, [ 11 ] and Mo [ 12 ] ), the chemical vapor deposition (CVD) synthesis of graphene proceeds via surface segregation followed by precipitation. Since the precipitation process is nonequilibrium, it is extremely challenging to tune the layer number of graphene using carbon-soluble metals in theory, though several approaches have attempted by reducing metal fi lm thickness Layer-tunable graphene has attracted broad interest for its potentials in nanoelectronics applications. However, synthesis of layer-tunable graphene by using traditional chemical vapor deposition method still remains a great challenge due to the complex experimental parameters and the carbon precipitation process. Herein, by performing ion implantation into a Ni/Cu bilayer substrate, the number of graphene layers, especially single or double layer, can be controlled precisely by adjusting the carbon ion implant fl uence. The growth mechanism of the layer-tunable graphene is revealed by monitoring the growth process, it is observed that the entire implanted carbon atoms can be expelled toward the substrate surface and thus graphene with designed layer number can be obtained. Such a growth mechanism is further confi rmed by theoretical calculations. The proposed approach for the synthesis of layer-tunable graphene offers more fl exibility in the experimental conditions. Being a core technology in microelectronics processing, ion implantation can be readily implemented in production lines and is expected to expedite the application of graphene to nanoelectronics.

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Synthesis of large-area graphene on molybdenum foils by chemical vapor deposition

Cited by 48 publications

References 30 publications

Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures

Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Synthesis of Layer‐Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejection Approach

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