Facile growth of centimeter-sized single-crystal graphene on copper foil at atmospheric pressure

Li, Jing; Wang, Xuanyun; Liu, Xingrui; Jin, Zhi; Wang, Dong; Li, Wan

doi:10.1039/c5tc00235d

Cited by 78 publications

(84 citation statements)

References 35 publications

(48 reference statements)

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“…It is clear that minimizing the impact of GBs is important for electronic applications of polycrystalline graphene, and today it is possible to grow single graphene grains with diameters on the order of centimeters [55][56][57]. However, there is a significant tradeoff between grain size, the required temperature, and the growth time in the CVD process, and when it comes to industrial applications these growth conditions should be minimized [58].…”

Section: Global Transport Properties Of Polycrystalline Graphenementioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. Both the local and global features of polycrystalline graphene have been investigated by a variety of simulations and experimental measurements. In this review, we summarize the properties of polycrystalline graphene, and by establishing a perspective on how the microstructure impacts its large-scale physical properties, we aim to provide guidance for further optimization and improvement of applications based on this material, such as flexible and wearable electronics, and high-frequency or spintronic devices.

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Section: Global Transport Properties Of Polycrystalline Graphenementioning

confidence: 99%

Scaling properties of polycrystalline graphene: a review

et al. 2016

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“…To this end there still exists significant interest in understanding the synthesis of graphene in great detail, in particular for synthetic graphene grown over Cu by chemical vapor deposition (CVD). [1][2][3][4][5][6][7][8][9][10][11][12][13] This is because CVD can be scaled up and is compatible within current industrial practice. 14 Most synthetic graphene growth approaches include pretreatment steps to the Cu foil to reduce contamination 15,16 , smoothen the surface 17,18 and control the level of oxidation 19,20 which can help improve grain size and density.…”

Section: Introductionmentioning

confidence: 94%

Oxidation as A Means to Remove Surface Contaminants on Cu Foil Prior to Graphene Growth by Chemical Vapor Deposition

Pang

Bachmatiuk

et al. 2015

J. Phys. Chem. C

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One of the more common routes to fabricate graphene is by chemical vapor deposition (CVD). This is primarily because of its potential to scale up the process and produce large area graphene. For the synthesis of large area monolayer Cu is probably the most popular substrate since it has a low carbon solubility enabling homogenous single-layer sheets of graphene to form. This process requires a very clean substrate. In this work we look at the efficiency of common pre-treatments such as etching or wiping with solvents and compare them to an oxidation treatment at 1025 o C followed by a reducing process by annealing in H 2 . The oxidation/reduction process is shown to be far more efficient allowing large area homogeneous single layer graphene formation without the presence of additional graphene flakes which form from organic contamination on the Cu surface.

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“…One method of addressing this issue is through melamine pretreatment of the polycrystalline Cu substrate, which suppresses the activation sites and thus controls the nucleation process [82]. Suppression of the nucleation density can also be achieved by mildly oxidizing the Cu substrate, resulting in reorganization of the nucleation sites for graphene growth [83]. Since graphene growth is governed by the size of the underlying crystal structure, it is also important to control the crystal domain size of the metal substrate [84].…”

Section: Surface Morphologymentioning

confidence: 99%

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

et al. 2018

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Since the first isolation of graphene over a decade ago, research into graphene has exponentially increased due to its excellent electrical, optical, mechanical and chemical properties. Graphene has been shown to enhance the performance of various electronic devices. In addition, graphene can be simply produced through chemical vapor deposition (CVD). Although the synthesis of graphene has been widely researched, especially for CVD growth method, the lack of understanding on various synthetic parameters still limits the fabrication of large-area and defect-free graphene films. This report critically reviews various parameters affecting the quality of CVD-grown graphene to understand the relationship between these parameters and the choice of metal substrates and to provide a point of reference for future studies of large-area, CVD-grown graphene.

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Facile growth of centimeter-sized single-crystal graphene on copper foil at atmospheric pressure

Abstract: By mildly oxidizing Cu foil and slowing down the gas flow rate, centimeter-sized single-crystalline graphene was grown on Cu at atmospheric pressure.

Cited by 78 publications

References 35 publications

Scaling properties of polycrystalline graphene: a review

Scaling properties of polycrystalline graphene: a review

Oxidation as A Means to Remove Surface Contaminants on Cu Foil Prior to Graphene Growth by Chemical Vapor Deposition

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

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