A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

Ani, Mohd Hanafi; Kamarudin, Muhammad Akmal; Ramlan, Amir Hakimi; Ismail, Edhuan; Sirat, Mohd Shukri; Mohamed, Mohd Ambri; Azam, Mohd Asyadi

doi:10.1007/s10853-018-1994-0

Cited by 49 publications

(40 citation statements)

References 129 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3b, c. Both samples show compact and pin-hole free morphology, but the film deposited on L-NiO x exhibits larger crystal, which agrees well with the XRD result. The smaller grain size of the perovskite film based on H-NiO x could be ascribed to its high defect density and large surface roughness, which increased the concentration of nucleation centers [35][36][37][38].…”

Section: Science China Materialsmentioning

confidence: 99%

Band alignment towards high-efficiency NiOx-based Sn-Pb mixed perovskite solar cells

Chen

Peng

et al. 2020

Sci. China Mater.

View full text Add to dashboard Cite

Narrow-bandgap tin-lead (Sn-Pb) mixed perovskite solar cells (PSCs) play a key role in constructing perovskite tandem solar cells that are potential to overpass Shockley-Queisser limit. A robust, chemically stable and lowtemperature-processed hole transporting layer (HTL) is essential for building high-efficiency Sn-Pb solar cells and perovskite tandem solar cells. Here, we explore a roomtemperature-processed NiO x (L-NiO x) HTL based on nanocrystals (NCs) for Sn-Pb PSCs. In comparison with hightemperature-annealed NiO x (H-NiO x) film, the L-NiO x film shows deeper valence band and lower trap density, which increases the built-in potential and reduces carrier recombination, leading to a power conversion efficiency of 18.77%, the record for NiO x-based narrow-bandgap PSCs. Furthermore, the device maintains about 96% of its original efficiency after 50 days. This work provides a robust and room-temperatureprocessed HTL for highly efficient and stable narrow-bandgap PSCs.

show abstract

Section: Science China Materialsmentioning

confidence: 99%

Band alignment towards high-efficiency NiOx-based Sn-Pb mixed perovskite solar cells

Chen

Peng

et al. 2020

Sci. China Mater.

View full text Add to dashboard Cite

show abstract

“…Ni (111) has the least lattice mismatch with graphene compared to other transition metals (< 1%) making it catalytically more favourable for growing graphene [136]. Graphene grows on Ni through bulk diffusion [21,115,118,136]. In this process, carbon atoms diffuse into the bulk of the substrate due to the solubility of Ni.…”

Section: Solid Substratesmentioning

confidence: 99%

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

et al. 2020

View full text Add to dashboard Cite

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

show abstract

“…Pinholes are known to be catalytically active sites [31], which implies an increased reactivity at pinhole sites. In addition graphene synthesis is generally known to start with nucleation at defect sites, which have low energy barrier for nucleation [32]. Therefore, the difference in graphene synthesis is explained by the formation of pinholes as defect sites on Mo 2 C layer as represented in figure 6.…”

Section: Effect Of Density and Oxygen Content Of Mo Layers On Mlg Synmentioning

confidence: 99%

The role of pinhole structures in Mo thin films on multi-layer graphene synthesis

et al. 2020

View full text Add to dashboard Cite

In this study, the density and oxygen content of Mo thin films were varied by changing the deposition conditions, in order to understand their influence on the catalytic activity of Mo 2 C for the synthesis of multi-layer graphene (MLG). Structural and morphological analysis of Mo 2 C in relation to its catalytic activity indicate that the density of Mo plays a more critical role on MLG synthesis than the oxygen content. Results show that the pinholes present in relatively low density Mo layers act as catalytically active defect sites, promoting MLG synthesis. OPEN ACCESS RECEIVED

show abstract

A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene

Cited by 49 publications

References 129 publications

Band alignment towards high-efficiency NiOx-based Sn-Pb mixed perovskite solar cells

Band alignment towards high-efficiency NiOx-based Sn-Pb mixed perovskite solar cells

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

The role of pinhole structures in Mo thin films on multi-layer graphene synthesis

Contact Info

Product

Resources

About