The excess of surface dangling bonds makes the formation of free-standing two-dimensional (2D) metals unstable and hence difficult to achieve. To date, only a few reports have demonstrated 2D metal formation over substrates. Here, we show a free-standing crystalline single-atom-thick layer of iron (Fe) using in situ low-voltage aberration-corrected transmission electron microscopy and supporting image simulations. First-principles calculations confirm enhanced magnetic properties for single-atom-thick 2D Fe membranes. This work could pave the way for new 2D structures to be formed in graphene membranes.
Here, we present a simple method for preparing thin few-layer sheets of hexagonal BN with micrometer-sized dimensions using chemical exfoliation in the solvent 1,2-dichloroethane. The atomic structure of both few-layer and monolayer BN sheets is directly imaged using aberration-corrected high-resolution transmission electron microscopy. Electron beam induced sputtering effects are examined in real time. The removal of layers of BN by electron beam irradiation leads to the exposure of a step edge between a monolayer and bilayer region. We use HRTEM imaging combined with image simulations to show that BN bilayers can have AB stacking and are not limited to just AA stacking.
Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge–discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l−1 at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.
Black phosphorus was first synthesized by Bridgman in 1914 [1] but has been less intensively studied in the past century due The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has currently aroused the interest of 2D material researchers. In this review, first, the fundamentals of phosphorus allotropes, phosphorene, and black phosphorus, are briefly introduced, along with their structures, properties, and synthesis methods. Second, the readers are presented with an overview of their energy applications. Particularly in electrochemical energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows the intercalation/deintercalation of larger ions as compared to its graphene counterpart. Therefore, phosphorene may possess greater potential for high electrochemical performance. In addition, the status of lithium ion batteries as well as secondary sodium ion batteries is reviewed. Next, each application for energy generation, conversion, and storage is described in detail with milestones as well as the challenges. These emerging applications include supercapacitors, photovoltaic devices, water splitting, photocatalytic hydrogenation, oxygen evolution, and thermoelectric generators. Finally the fast-growing dynamic field of phosphorene research is summarized and perspectives on future possibilities are presented calling on the efforts of chemists, physicists, and material scientists
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few
Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.
Many physical and chemical properties of semiconducting nanocrystals strongly depend on their spatial dimensions and crystallographic structure. For these reasons, achieving a high degree of size and shape control plays an important role with respect to their application potential. In this report we present a facile route for the direct colloidal synthesis of copper(I) sulfide nanorods. A high reactivity of the starting materials is essential to obtain nanorods. We achieve this by using a thiol that thermally decomposes easily and serves as the sulfur source. The thiol is mixed in a noncoordinating solvent, which acts as the reaction medium. Adjustment of the nucleation temperature makes it possible to tailor uniform nanorods with lengths from 10 to 100 nm. The nanorods are single crystalline, and the growth direction is shown to occur along the a-axis of djurleite. The growth process and character of the nanorods were investigated through UV-vis and NIR absorption spectroscopy, transmission electron microscopy, and powder X-ray diffraction measurements.
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