Dielectric film on graphene severely affects the performance of graphene field-effect transistors (GFETs). The authors investigated AlN dielectric film on graphene by Raman microscopy. AlN deposition led to the appearance of disorder-related peaks and to a wider Raman-active peak. The intensities of the disorder-related modes decreased exponentially with an increase in the layer number of graphene, indicating that AlN dielectric film mainly affected the surface of graphene. According to the experimental results, the authors suggested that few-layer graphene might be a better choice than single-layer graphene for the application of GFET.
The Isatis indigotica extract is widely used in clinical practice for the treatment of influenza, epidemic hepatitis, epidemic encephalitis B etc. The goal of this study was to investigate whether coinjection of the Isatis indigotica extract with foot-and-mouth disease virus (FMDV) DNA vaccine could increase the protective immune response. Mice were vaccinated twice with either FMDV DNA vaccine plus the Isatis indigotica extract or DNA vaccine alone. Compared with the group of DNA vaccine alone, in the group that received DNA vaccine plus the Isatis indigotica extract was observed a significant increase in not only FMDV-specific antibody response but also T cell proliferation assay. All swines immunized with either FMDV DNA vaccine plus the Isatis indigotica extract or DNA vaccine alone were partially protected from FMDV challenge, but the signs of DNA vaccine plus the Isatis indigotica extract group were less severe than that of DNA vaccine alone. Coinjection of the Isatis indigotica extract with DNA vaccine has adjuvant effect on the immune response against viral pathogens and its application provides an effective strategy to improve the efficacy of DNA vaccines.
InAlAs/InGaAs high electron mobility transistors (HEMTs) on an InP substrate with well-balanced cutoff frequency f T and maximum oscillation frequency f max are reported. An InAlAs/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 µm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance g m.max of 1051 mS/mm, and drain-gate breakdown voltage BV DG of 5.92 V. In addition, this device exhibits f T = 249 GHz and f max = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 Ω•mm. Moreover, the f T obtained in this work is the highest ever reported in 100-nm gate length InAlAs/InGaAs InP-based HEMTs. The outstanding g m.max , f T , f max , and good BV DG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.
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