We evaluated the DC and RF characteristics of an FET using a c-axis aligned crystalline oxide semiconductor (CAAC-OS), a crystalline oxide semiconductor, with a channel length L of 60 nm. The CAAC-OS FET exhibits extremely low off-state leakage current, and its cutoff frequency f T and maximum oscillation frequency f max are in the order of gigahertz. Moreover, the CAAC-OS FET is applicable to a low-power large-scale integration (LSI).
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