A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In–Ga–Zn Oxide BEOL-FETs

Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency

“…Since the IGZO can be applied to both the resistive-switching layer and thin-film transistor (TFT) channel, the IGZO-based integrated neuromorphic circuits with memristor synapse and neuron circuits would be very promising. The heterogeneous integration between Si CMOS front-end-of-the-line (FEOL) and IGZO back-end-of-the-line (BEOL) can be also plausible in reducing the overall system power consumption . In this sense, it is apparent that IGZO is being regarded as one of the superior platform materials for advanced electronic devices and synaptic devices; eventually, neuromorphic systems will be constructed in close relation with IGZO. , The application of memristors as synaptic devices requires gradual switching characteristics because they prove more advantageous in obtaining multilevel weights, high linearities in potentiation and depression processes by a repetition of identical pulses, and low energy consumption per synaptic event. − For the proposed device, by introducing only a single material in the switching layer, the fabrication of the device becomes simpler.…”

“…The heterogeneous integration between Si CMOS front-end-of-the-line (FEOL) and IGZO back-end-of-the-line (BEOL) can be also plausible in reducing the overall system power consumption. 30 In this sense, it is apparent that IGZO is being regarded as one of the superior platform materials for advanced electronic devices and synaptic devices; eventually, neuromorphic systems will be constructed in close relation with IGZO. 31,32 The application of memristors as synaptic devices requires gradual switching characteristics because they prove more advantageous in obtaining multilevel weights, high linearities in potentiation and depression processes by a repetition of identical pulses, and low energy consumption per synaptic event.…”

5,291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS

“…The OSFET has another prominent feature; i.e., it is a back‐end‐of‐line transistor that can be monolithically integrated with Si CMOS. Application of this integration technology to memory and CPU modules, which also exploit OSFET's extremely low off‐state current, 10 has been reported 11–14 . Extremely low off‐state current of OSFET also contributes to retention time of pixel data in displays, which enables still images to be displayed at low operating frequencies and power consumption to be reduced 15,16 …”

“…Application of this integration technology to memory and CPU modules, which also exploit OSFET's extremely low off-state current, 10 has been reported. [11][12][13][14] Extremely low off-state current of OSFET also contributes to retention time of pixel data in displays, which enables still images to be displayed at low operating frequencies and power consumption to be reduced. 15,16 In this work, for the first time in the world, this OS/Si monolithic stack technology is introduced to a display, in which the source and scan drivers are fabricated with Si CMOS devices, and the pixels are monolithically fabricated with OSFETs.…”

9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor

“…An OS has an extremely low leakage current [1]. This feature lets the OS used in displays on the market [2], and integrated circuits utilizing OS such as a low power-consumption memory [3] and a central processing unit (CPU) [4] are proposed. An analog input and output (I/O) in sensors also requires a low off-state current, and in some application examples utilizing the extremely low leakage current of the OS field-effect transistor (OSFET), an image of an object moving at a high speed is captured by a global shutter method without image distortion [5], and the OSFET is used in an X-ray sensing panel in radiology [6].…”