We measured a significantly low off-state current (135 yA/µm at 85 °C) of a metal oxide semiconductor (MOS) transistor using indium–gallium–zinc oxide (IGZO), which is an oxide semiconductor material. Note that “y” is 10-24. A transistor in which the hydrogen concentration in an IGZO film is lowered (5×1019 cm-3 or lower) was used. To estimate the minute current accurately, we established a measurement method in which changes in the amount of electrical charge are measured for a long time. Such extremely low off-state current characteristics show promise for new applications of IGZO transistors in memories.
An oxide semiconductor has a wide band gap and low off-state current. We focused on the off-state characteristics of a transistor including an oxide semiconductor and concentrated on measuring the off-state current. We fabricated a circuit TEG that had an In-Ga-Zn-Oxide TFT (IGZO-TFT) with a large channel width of 100,000 micro meter over a glass substrate and estimated the amount of electric charge flowing through the circuit TEG for a long time. As a result, we discovered that an IGZO-TFT had off-state current as small as 50yA/micro meter (at 85 degrees of Centigrade). We are the first to measure off-state current on the order of yA; "y" is the SI prefix representing 10e-24
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