5,291‐ppi OLED display enabled by monolithic integration of <i>C</i>‐axis‐aligned crystalline IGZO FET and Si CMOS

Kimura, Kiyoshi; Kobayashi, Hidetomo; Shishido, Hideaki; Isa, Toshiyuki; Aoyama, Teruyoshi; Jimbo, Yasuhiro; Hodo, Ryota; Kusunoki, Koji; Kunitake, Hitoshi; Yamazaki, Shunpei

doi:10.1002/jsid.1167

Cited by 5 publications

(5 citation statements)

References 22 publications

(32 reference statements)

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“…The stimulation and imaging parts are composed of commercially available OLED panels and DSLR CMOS chips. These devices will only become cheaper, will have higher resolution over time, and can even incorporate microlenses and other novel optics that would further increase the capability of this approach (56)(57)(58). While a lensless imaging approach to imaging cells infected with BV and Rabies may be limited in resolution and sensitivity compared to other imaging methods, it enables the ability to image and stimulate a large FOV in real-time with a much smaller footprint than a microscope, similar to Pollmann et al (59).…”

Section: Optoelectronic For Facilitating Scalable and Automated Viral...mentioning

confidence: 99%

Light-Guided Rabies Virus Tracing for Neural Circuit Analysis

Zhang¹,

Ngamkanjanarat

et al. 2023

Preprint

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Neuronal tracing methods are essential tools to understand the fundamental architecture of neural circuits and their connection to the overall functional behavior of the brain. Viral vectors used to map these transsynaptic connections are capable of cell-type-specific and directional-specific labeling of the neuronal connections. Herein, we describe a novel approach to guide the transsynaptic spreading of the Rabies Virus (RV) retrograde tracer using light. We built a Baculovirus (BV) as a helper virus to deliver all the functional components necessary and sufficient for a nontoxic RV to spread from neuron to neuron, with a light-actuated gene switch to control the RV polymerase, theL gene. This design should allow for precisely controlled polysynaptic viral tracing with minimal viral toxicity. To use this system in a highly scalable and automated manner, we built optoelectronics for controlling this systemin vitrowith a large field of view using an off-the-shelf CMOS sensor, OLED display panel, and microcontrollers. We describe the assembly of these genetic circuits using the uLoop DNA assembly method and a library of genetic parts designed for the uLoop system. Combining these tools provides a framework for increasing the capabilities of nontoxic tracing through multiple synapses and increasing the throughput of neural tracing using viruses.

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Section: Optoelectronic For Facilitating Scalable and Automated Viral...mentioning

confidence: 99%

Light-Guided Rabies Virus Tracing for Neural Circuit Analysis

Zhang¹,

Ngamkanjanarat

et al. 2023

Preprint

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“…Another challenge lies in the limited color gamut of OLEDs, as existing materials struggle to produce certain hues. Scientists are working on new materials with better color performance to expand the color range [240,241]. Poor charge injection and transport characteristics of OLED materials also affect device efficiency and brightness [242].…”

Section: Material-related Challengesmentioning

confidence: 99%

“…These challenges drive the need for advancements in OLED driving circuit design to enhance their performance and efficiency. A world-first achievement integrates Si CMOS and scaled OSFET devices to create a high-pixel-density OLED display panel, demonstrating a monolithic structure suitable for versatile, low-power displays and next-generation XR devices [241].…”

Section: Driving Circuitsmentioning

confidence: 99%

Unraveling Degradation Processes and Strategies for Enhancing Reliability in Organic Light-Emitting Diodes

Naqvi,

Baig,

Farid

et al. 2023

Nanomaterials

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Organic light-emitting diodes (OLEDs) have emerged as a promising technology for various applications owing to their advantages, including low-cost fabrication, flexibility, and compatibility. However, a limited lifetime hinders the practical application of OLEDs in electronic devices. OLEDs are prone to degradation effects during operation, resulting in a decrease in device lifetime and performance. This review article aims to provide an exciting overview of OLED degradation effects, highlighting the various degradation mechanisms. Subsequently, an in-depth exploration of OLEDs degradation mechanisms and failure modes is presented. Internal and external processes of degradation, as well as the reactions and impacts of some compounds on OLED performance, are then elucidated. To overcome degradation challenges, the review emphasizes the importance of utilizing state-of-the-art analytical techniques and the role of these techniques in enhancing the performance and reliability of OLEDs. Furthermore, the review addresses the critical challenges of lifetime and device stability, which are crucial for the commercialization of OLEDs. This study also explores strategies to improve OLEDs’ lifetime and stability, such as using barrier layers and encapsulation techniques. Overall, this article aims to contribute to the advancement of OLED technology and its successful integration into diverse electronic applications.

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“…[ 1–3 ] In addition, the advantages of a‐IGZO TFTs such as low fabrication cost, large area uniformity, and relatively low‐temperature fabrication (

\leq

400 °C) have resulted in the commercialization of various display products. [ 4–6 ] Recently, a‐IGZO TFTs have received attention in the semiconductor industry because of their high compatibility with vertical structures for achieving high‐density integration and processes in memory, which is known as the post‐Von Neumann architecture. However, the main challenge in this field is to achieve excellent step coverage and thickness precision of thin films within complex three‐dimensional (3D) structures for high‐density integration.…”

Section: Introductionmentioning

confidence: 99%

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

Kim,

Choi,

Lee

et al. 2023

Small Structures

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Highly reliable atomic layer deposition (ALD)‐derived In‐Ga‐Zn‐O thin‐film transistors with high field‐effect mobility (μFE) and hydrogen (H) resistivity are crucial for the semiconductor industry. Herein, a hybrid Al2O3 gate insulator (GI) is proposed that is designed by controlling the plasma‐enhanced ALD and thermal ALD processes in situ to demonstrate robust characteristics. A hybrid GI is applied to the top‐gate geometry of an In0.71Ga0.08Zn0.21O active layer. The optimal device exhibits exceptional electrical characteristics, including a threshold voltage of 0.37 V, μFE of 150.7 cm2 V s−1, subthreshold swing of 64.0 mV decade−1, and hysteresis of 0.02 V. It demonstrates high resistance to H annealing and reliable positive bias temperature stress, as well as changes in VTH shifts of −0.43 and 0.00 V, respectively. The excellent electrical characteristics and high robustness of the device can be attributed to the precise control of H, oxygen, and carbon species within the upper region of the hybrid GI. The achievement of robust device characteristics enables the design of a novel vertical complementary metal‐oxide‐semiconductor inverter that exhibits a voltage gain of 44.7 V V−1 and a noise margin of 87.5% at a 10 V supply voltage.

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5,291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS

Cited by 5 publications

References 22 publications

Light-Guided Rabies Virus Tracing for Neural Circuit Analysis

Light-Guided Rabies Virus Tracing for Neural Circuit Analysis

Unraveling Degradation Processes and Strategies for Enhancing Reliability in Organic Light-Emitting Diodes

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications

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