Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 10(4) A W(-1)) and EQE value (up to 10(5)), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.

Manipulating Ag nanowire (AgNW) assembly to tailor the opto-electrical properties and surface morphology could improve the performance of next-generation transparent conductive electrodes. In this paper, we demonstrated a water-bath assisted convective assembly process at the temporary water/alcohol interface for fabricating hierarchical aligned AgNW electrodes. The convection flow plays an important role during the assembly process. The assembled AgNW film fabricated via three times orthogonal dip-coating at a water-bath temperature of 80 °C has a sheet resistance of 11.4 Ω sq(-1) with 89.9% transmittance at 550 nm. Moreover, the root mean square (RMS) of this assembled AgNW film was only 15.6 nm which is much lower than the spin-coated random AgNW film (37.6 nm) with a similar sheet resistance. This facile assembly route provides a new way for manufacturing and tailoring ordered nanowire-based devices.

A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.

No abstract

Lu Tai-Ping( ) a) , Li Shu-Ti(Wu Le-Juan( ) a) , Wang Hai-Long( ) a) , and Yang Xiao-Dong( ) a)

InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

In this study, the characteristics of the nitride-based blue light-emitting diode (LED) without an electron-blocking layer (EBL) are analyzed numerically. The emission spectra, carrier concentrations in the quantum wells (QWs), energy band diagrams, electrostatic fields, and internal quantum efficiency (IQE) are investigated. The simulation results indicate that the LED without an EBL has a better hole-injection efficiency and smaller electrostatic fields in its active region over the conventional LED with an AlGaN EBL. The simulation results also show that the LED without an EBL has severe efficiency droop. However, when the special designed p-type doped InGaN QW barriers are used, the efficiency droop is markedly improved and the electroluminescence (EL) emission intensity is greatly enhanced which is due to the improvement of the hole uniformity in the active region and small electron leakage.

No abstract