Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Abstract

InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

“…[11,12] Meanwhile, many theoretical methods including Monte Carlo (MC), molecular dynamics (MD), ab initio, and computational fluid dynamics (CFD), can provide some useful results in epitaxial growth and investigate the related factors that may affect the growth. [13][14][15][16][17][18][19][20] Wang et al used Monte Carlo simulations to study the effects of substrate temperature, Ga flux on growth rate, and growth front quality. [21] Gong et al discussed the growth behavior of GaN film along the non-polar [1 1 −2 0] direction using MD simulations.…”

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

“…Nowadays, indium gallium nitride (In x Ga 1−x N) alloys have attracted a lot of attention for optoelectronic applications [1][2][3] due to their tunable energy band gap varying from 0.7 eV to 3.4 eV. [4][5][6][7][8][9] The absorption range covers a major portion of the solar spectrum, making In x Ga 1−x N a promising candidate for multi-junction solar cell systems. In addition, with high radiation resistance, thermal stability and chemical tolerance, InGaN solar cells could operate under extreme environments.…”

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

“…[9,10] So far, many methods have been proposed to reduce the effect of electron current leakage [11][12][13][14] and to increase the efficiency of hole injection. [15][16][17][18][19] Even, some scientists have tried to use an Al-GaN/GaN superlattice (SL) EBL to improve the performance of LEDs. [20] It has been proposed that an AlGaN/GaN SL EBL in an LED device structure could prevent the carrier loss over heterostructure barriers.…”