Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

Xiong, Jun; Xu, Ya‐Qiong; Zhao, Fang; Jin, Zhen; Ding, Bingjun; Zheng, Shuwen; Zhang, Tao; Fan, Guanghan

doi:10.1088/1674-1056/22/10/108505

Cited by 3 publications

(1 citation statement)

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“…It is noted that AlGaN and InGaN component layers of the short period superlattices on the InGaN template layer involve compressive and tensile strain, respectively, because each component layer is thinner than its critical layer thickness, and thus the properly designed InGaN/AlGaN superlattices can compensate for mismatch-induced strain and be employed as the strain-compensated barrier layer for InGaNbased MQWs. [18,19] Each AlGaN or InGaN component layer is occupied simultaneously by its upper and under layer, leading to the formation of good in-plane uniformity for AlInGaN without spatial compositional (or strain) fluctuation. This is why there are no other nitrides-related peaks in XRD profiles, such as In-rich clusters.…”

Section: Resultsmentioning

confidence: 99%

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Chen

Jiang

et al. 2017

Chinese Phys. B

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A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence (PL) properties of the InGaN/AlInGaN MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs (76.1%) is much higher than that of InGaN/GaN MQWs (21%). The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.

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Section: Resultsmentioning

confidence: 99%

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Chen

Jiang

et al. 2017

Chinese Phys. B

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Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers

Xiong

Xu²,

Zheng

et al. 2013

Appl. Phys. A

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Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

Janjua

Alyamani

et al. 2014

IEEE Photonics J.

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We have studied enhanced carrier injection by having an electron blocking layer (EBL) based on a graded superlattice (SL) design. Here, we examine, using a selfconsistent 6 Â 6 kÁp method, the energy band alignment diagrams under equilibrium and forward bias conditions while also considering carrier distribution and recombination rates (Shockley-Read-Hall, Auger, and radiative recombination rates). The graded SL is based on Al x Ga 1Àx N (larger bandgap) Al 0:5 Ga 0:5 N (smaller bandgap) SL, where x is changed from 0.8 to 0.56 in steps of 0.06. Graded SL was found to be effective in reducing electron leakage and enhancing hole injection into the active region. Due to our band engineering scheme for EBL, four orders-of-magnitude enhancement were observed in the direct recombination rate, as compared with the conventional bulk EBL consisting of Al 0:8 Ga 0:2 N. An increase in the spatial overlap of carrier wavefunction was obtained due to polarization-induced band bending in the active region. An efficient single quantumwell ultraviolet-B light-emitting diode was designed, which emits at 280 nm. This is the effective wavelength for water disinfection application, among others.

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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

Abstract: Jian-Yong(熊建勇) a) , Xu Yi-Qin(许毅钦) b) , Zhao Fang(赵芳) a) , Song Jing-Jing(宋晶晶) a) , Ding Bin-Bin(丁彬彬) a) , Zheng Shu-Wen(郑树文) a) , Zhang Tao(张涛) a) , and Fan Guang-Han(范广涵) a) †

Cited by 3 publications

References 30 publications

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers

Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

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Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

Abstract: Jian-Yong(熊建勇) a) , Xu Yi-Qin(许毅钦) b) , Zhao Fang(赵 芳) a) , Song Jing-Jing(宋晶晶) a) , Ding Bin-Bin(丁彬彬) a) , Zheng Shu-Wen(郑树文) a) , Zhang Tao(张 涛) a) , and Fan Guang-Han(范广涵) a) †

Cited by 3 publications

References 30 publications

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers

Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes

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Abstract: Jian-Yong(熊建勇) a) , Xu Yi-Qin(许毅钦) b) , Zhao Fang(赵芳) a) , Song Jing-Jing(宋晶晶) a) , Ding Bin-Bin(丁彬彬) a) , Zheng Shu-Wen(郑树文) a) , Zhang Tao(张涛) a) , and Fan Guang-Han(范广涵) a) †