Understanding and controlling the charge transfer processes of twodimensional (2D) materials are fundamental for the optimized device performance based on 2D semiconductors and heterostructures. The charge transfer rate is very robust in transition metal disulfide (TMD) heterostructures with type II band alignments, which can be manipulated by intercalating a dielectric layer like hBN to isolate the donor and acceptor monolayers. This study shows that there is an alternative way to change the electron transfer and recombination rates in the case of nLMoS 2 /mLWSe 2 multilayer heterostructures, where the donor−acceptor distance is maintained, but the rate of electron transfer is strongly layer dependent and shows asymmetry for the layer number of donor and acceptor monolayers. Especially, the 1LMoS 2 /2LWSe 2 heterostructure slows electron transfer and charge recombination rates ∼2.3 and ∼12 times that of the 1LMoS 2 /1LWSe 2 heterostructure, respectively, which have been competitive with that in the 1LMoS 2 /hBN/1LWSe 2 heterostructure. From an application perspective, the noninterfacial electron transfer in which photogenerated electrons should across more than one atomically thin layer is not favorable due to the built-in electric field established by the initial interfacial electron transfer.
InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
In this work, segmented silver nanowires (AgNWs) with an average diameter of 60 nm have been successfully synthesized by a typical polyol method without any templates and seeds. The synthesized segmented AgNWs were strongly dependent on the reaction temperature and time. It was found from high-resolution transmission electron microscopy and selected area electron diffraction measurements that the connection node of segmented AgNWs was in the form of a twinned crystal. We speculated that these segmented AgNWs were possibly derived from end-to-end self-connection and self-concrescence of two neighbouring Ag nanorods or nanowires at a suitable reaction temperature and time, which is further confirmed by the secondary growth of AgNWs. In addition, segmented AgNWs were blended into hole transporting layers to enhance the performance of polymer solar cells (PSCs) by utilizing their localized surface plasmon resonance and optical scattering effects. As a result, the power conversion efficiency (PCE) and short-circuit current density (Jsc) of PSCs with segmented AgNWs increased from 2.81% and 8.99 mA cm-2 to 3.30% and 9.95 mA cm-2, respectively.
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