The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.

Section: Parameters and Methodsmentioning

confidence: 99%

Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters

Yang¹,

Wu²,

Liu³

et al. 2013

“…Nowadays, indium gallium nitride (In x Ga 1−x N) alloys have attracted a lot of attention for optoelectronic applications [1][2][3] due to their tunable energy band gap varying from 0.7 eV to 3.4 eV. [4][5][6][7][8][9] The absorption range covers a major portion of the solar spectrum, making In x Ga 1−x N a promising candidate for multi-junction solar cell systems. In addition, with high radiation resistance, thermal stability and chemical tolerance, InGaN solar cells could operate under extreme environments.…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Zhao¹,

Chen²,

Ren³

et al. 2013

Self Cite

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

“…In recent years, structural and optical properties of InGaN have aroused great interest because of its widespread applications in light-emitting devices such as light-emitting diodes (LEDs) and laser diodes. [1][2][3][4][5][6] Meanwhile, high emission efficient InGaN is proposed as a potential novel fluorescent material for field emission display (FED), which is possible to work at a low acceleration voltage (42 V) compared with the traditional phosphor. [7] It has also been reported that InGaN material was introduced into a single chip white light emitting diode as an underlying layer (UL) embedded below an active layer of InGaN/GaN multiple quantum wells, and the quality of the white light could be controlled by modulating the relaxation degree of the InGaN UL.…”

Section: Introductionmentioning

confidence: 99%

Influence of Si doping on the structural and optical properties of InGaN epilayers

Lu¹,

Ma²,

Su³

et al. 2013

Self Cite