Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

Zhang, Yunyan; Zhu, Xueliang; Yin, Yongsheng; Ma, Jun

doi:10.1109/led.2012.2197593

Cited by 40 publications

(19 citation statements)

References 11 publications

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“…15,16 So far, researchers have proposed enormous approaches to suppress the electron overflow and enhance the efficiency of hole injection, including InGaN staircase electron injector, 17 the usage of staggered quantum wells (QWs), 18 InGaN-AlGaN-InGaN barriers, 19 AlGaN barriers, 20 indium graded last barrier, 21 p-InGaN hole reservoir layer, 22 graded electron blocking layer (EBL), 23 AlGaN/GaN superlattice EBL, 24 and AlGaN/AlInN superlattice EBL. 25 As is well known, holes in GaN-based material have a relatively high effective mass and therefore a very low mobility. It is hard for holes to inject into the active region and transport in it.…”

mentioning

confidence: 99%

Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition

Xiong

Zhao

Ding

et al. 2013

Journal of Applied Physics

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mentioning

confidence: 99%

Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition

Xiong

Zhao

Ding

et al. 2013

Journal of Applied Physics

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“…It can be grown over the entire composition range including compositions that are lattice-matched and polarization-matched to GaN. InAlN lattice-matched to GaN in the (0001) plane (indium content ~17%) is currently used for barrier layers in high electron mobility transistors (HEMTs), as well as for electron and hole blocking layers (EBLs/HBLs) in lasers and light-emitting diodes (LEDs) [1][2][3][4][5][6]. InAlN lattice-matched to GaN is advantageous for these applications because of its wide bandgap (4.3 eV), large spontaneous polarization, and stress-free state.…”

Section: Introductionmentioning

confidence: 99%

High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

Kyle

Kaun

et al. 2016

Journal of Crystal Growth

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InAlN grown by plasma-assisted molecular beam epitaxy often contains a honeycomb microstructure. The honeycomb microstructure consists of 5-10 nm diameter aluminum-rich regions which are surrounded by indium-rich regions. Layers without this microstructure were previously developed for nominally lattice-matched InAlN and have been developed here for higher indium content InAlN. In this study, InAlN was grown in a nitrogen-rich environment with high indium to aluminum flux ratios at low growth temperatures. Samples were characterized by high-resolution x-ray diffraction, atomic force microscopy, high-angle annular dark-field scanning transmission electron microscopy, and atom probe tomography. Atomic force microscopy showed InAlN layers grown at temperatures below 450 °C under nitrogen-rich conditions were free of droplets. InAlN films with indium contents up to 81% were grown at temperatures between 400 and 440 °C. High-angle annular dark-field scanning transmission electron microscopy and atom probe tomography showed no evidence of honeycomb microstructure for samples with indium contents of 34% and 62%. These layers are homogeneous and follow a random alloy distribution. A growth diagram for InAlN of all indium contents is reported.

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“…Several authors have reported short-period superlattices (SPSL) based EBLs [38], [39] to improve hole injection efficiency and electrical confinement of electrons. Although this strategy effectively reduces hole blocking barrier height, it also directly introduces deep hole traps which impede the vertical transport of holes through these layers.…”

Section: Inverse Tapered P-waveguide Designmentioning

confidence: 99%

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

Satter

Lochner

Kao

et al. 2014

IEEE J. Quantum Electron.

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An AlGaN deep ultraviolet laser diode design exploiting AlN substrates is presented, featuring an inversetapered p-waveguide layer. The 2-D optoelectronic simulation predicts lasing at 290 nm. Spatial balancing of the lasing mode to minimize optical loss in the p-Ohmic metallization is achieved through the use of a narrow bandgap yet transparent n-waveguide layer. Several electron blocking layer (EBL) designs are investigated and compared with a conventionally tapered EBL design. Through judicious volumetric redistribution of fixed negative polarization charge, inverse tapering may be exploited to achieve nearly flat valence band profiles free from barriers to hole injection into the active region, in contrast to conventional designs. Furthermore, proper selection of quantum well barrier and spacer compositions are demonstrated to reduce electron leakage from the active region. Numerical simulations demonstrate that the inverse tapered strategy is a viable solution for efficient hole injection in deep ultraviolet laser diodes operating at shorter wavelengths (<290 nm).Index Terms-AlN substrate, AlGaN epitaxial layer, deep ultraviolet laser diodes, efficient hole transport, hole blocking layer, inverse tapering, optical absorption loss, polarization charge.

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Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

Cited by 40 publications

References 11 publications

Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition

Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition

High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport

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