Light collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices, the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection, anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper, we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition, laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures, which create gradients of refractive index from the ambient air to the substrate. Furthermore, by decoration of the Si nanowires with metallic nanoparticles, surface plasmon resonance can be used to further control the broadband reflections, reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved.

We report a simple subwavelength-diameter plastic wire, similar to an optical fiber, for guiding a terahertz wave with a low attenuation constant. With a large wavelength-to-fiber-core ratio, the fractional power delivered inside the lossy core is reduced, thus lowering the effective fiber attenuation constant. In our experiment we adopt a polyethylene fiber with a 200 microm diameter for guiding terahertz waves in the frequency range near 0.3 THz in which the attenuation constant is reduced to of the order of or less than 0.01 cm(-1). Direct free-space coupling efficiency as high as 20% can be achieved by use of an off-axis parabolic mirror. Furthermore, all the plastic wires are readily available, with no need for complex or expensive fabrication.

Tunable lattice resonances are demonstrated in a hybrid plasmonic crystal incorporating the phase-change material Ge2Sb2Te5 (GST) as a 20-nm-thick layer sandwiched between a gold nanodisk array and a quartz substrate. Non-volatile tuning of lattice resonances over a range Δλ of about 500 nm (1.89 µm to 2.27 µm) is achieved experimentally via intermediate phase states of the GST layer. This work demonstrates the efficacy and ease of resonance tuning via GST in the near infrared, suggesting the possibility to design broadband non-volatile tunable devices for optical modulation, switching, sensing and nonlinear optical devices.

Here we theoretically demonstrate that a quasi-crystal array of nanoholes in a metal screen can perform the function of a lens: one-to-one imaging of a point source located a few tens of wavelengths away from the array to a point on the other side of the array. A displacement of the point source leads to a linear displacement of the image point. Complex structures composed of multiple point sources can be faithfully imaged with resolutions comparable to those of high numerical aperture lenes.

We show the strong optically induced interactions between discrete metamolecules in a metamaterial system and coherent monochromatic continuous light beam with a spatially tailored phase profile can be used to prepare a subwavelength scale energy localization. Well-isolated energy hot spots of a fraction of a wavelength can be created and positioned on the metamaterial landscape offering new opportunities for data storage and imaging applications.

Disorder is emerging as a strategy for fabricating random laser sources with very promising materials, such as perovskites, for which standard laser cavities are not effective or too expensive. We need, however, different fabrication protocols and technologies for reducing the laser threshold and controlling its emission. Here, we demonstrate an effectively solvent-engineered method for high-quality perovskite thin films on a flexible polyimide substrate. The fractal perovskite thin films exhibit excellent optical properties at room temperature and easily achieve lasing action without any laser cavity above room temperature with a low pumping threshold. The lasing action is also observed in curved perovskite thin films on flexible substrates. The lasing threshold can be further reduced by increasing the local curvature, which modifies the scattering strengths of the bent thin film. We also show that the curved perovskite lasers are extremely robust with respect to repeated deformations. Because of the low spatial coherence, these curved random laser devices are efficient and durable speckle-free light sources for applications in spectroscopy, bioimaging, and illumination.

In this paper, the temperature dependent lasing characteristics of solution-processed organic-inorganic halide perovskite CH3NH3PbI3 films have been demonstrated. The lasing temperature can be sustained up to a near room temperature at 260 K. Via the temperature dependent photoluminescence (PL) measurements, an emerged phase-transition band can be observed, ascribing to the crystalline structures changed from the orthorhombic to tetragonal phase states in the perovskites as a function of a gradual increase in the ambient temperature. The optical characteristics of the PL emission peaks and the anomalous shifts of the peak intensities are highly correspondent with the phase states in perovskites at different temperatures, showing a low-threshold lasing behavior at the phase transition. The laser cavities may be formed under multiple random scattering provided by the polycrystalline grain boundary and/or phase separation upon the phase transition. Since the threshold gain is potentially high in the random cavities, the large material gain exhibited by the solution-processed perovskite would be very promising in making practical laser devices.

Deep-ultraviolet lasing was achieved at 243.5 nm from an Al x Ga 1Àx N-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm 2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN. V