The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

Cao, Jianxing; Li, Shuti; Fan, Guanghan; Zhang, Yong; Zheng, Shuwen; Yin, Yongsheng; Huang, Junyi; Su, J.

doi:10.1016/j.jcrysgro.2010.03.032

Cited by 22 publications

(13 citation statements)

References 22 publications

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“…The root mean square roughness (RMS) value for 0 sec, 30 sec, 60 sec and 90 sec TMAl preflow were 3.42 nm, 3.09 nm, 4.48 and 6.28 nm. The non-linear relation of TMAl preflow and surface roughness was in agreement to those reported by Jianxing Cao et al [6]. It was observed, the surface of AlN with 0 sec TMAl preflow covered by small grain and small pits.…”

Section: A Surface Morphology and Xrd Analysis Of Alnsupporting

confidence: 91%

“…Yet, there still many challenging problems need to be solved i.e large mismatch in lattice parameter, thermal stress due to different thermal expansion coefficient, plastic deformation of silicon and melt back etching. Various thin films such as AlAs [4], SiC [5], AlN [6] and SCN [7] has been introduced as Gan buffer layer to reduce the large tensile stress and meltback etching for GaN epitaxy on Si. AlN is commonly adopted buffer layer due to its small lattice constant and its large band gap.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Lumbantoruan

Wong

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved. Keywords-GaN on Si(111); AlN buffer layer; TMAl preflow; MOCVDI.

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Section: A Surface Morphology and Xrd Analysis Of Alnsupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Lumbantoruan

Wong

et al. 2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

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“…For epitaxial growth of AlN on (111) Si with trimethylaluminium (TMAl) and NH 3 precursors, some groups have used an Al pre-deposition step using TMAl before AlN growth. [17][18][19] The knowledge of high temperature CVD growth of AlN on (111) Si has been adopted for CVD growth of hBN on (111) Si in this work.…”

mentioning

confidence: 99%

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed

Dahal

Weltz

et al. 2016

Applied Physics Letters

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Hexagonal boron nitride (hBN) growth was carried out on (111) Si substrates at a temperature of 1350 C using a cold wall chemical vapor deposition system. The hBN phase of the deposited films was identified by the characteristic Raman peak at 1370 cm À1 with a full width at half maximum of 25 cm À1 , corresponding to the in-plane stretch of B and N atoms. Chemical bonding states and composition of the hBN films were analyzed by X-ray photoelectron spectroscopy; the extracted B/ N ratio was 1.03:1, which is 1:1 within the experimental error. The fabricated metal-hBN-metal devices demonstrate a strong deep UV (DUV) response. Further, the hBN growth on the vertical (111) surfaces of parallel trenches fabricated in (110) Si was explored to achieve a thermal neutron detector. These results demonstrate that hBN-based detectors represent a promising approach towards the development of DUV photodetectors and efficient solid-state thermal neutron detectors.

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“…For the growth of AlN by sputtering, a previous report suggested that Al termination improved the AlN film surface and reduced defects. 17 We also demonstrated the deposition of an all-sputtered GaN/AlN film onto a Si(111) substrate at a substrate temperature below 650 °C. 18 To increase the value of GaN on AlN/Si substrates, it is necessary to achieve the same polarity control as that achieved for GaN on other template substrates such as c-sapphire.…”

Section: Introductionmentioning

confidence: 94%

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

et al. 2022

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The ability to control the polarity of an all-sputtered epitaxial GaN/AlN/Al film on a Si(111) substrate via intermediate oxidization was investigated. A stable surface of GaN on a Si substrate is a N-terminated surface (−c surface); hence, for electric device applications, the Ga-terminated surface (+c surface) is preferable. The GaN/AlN/Al film on Si(111) showed a −c surface, as confirmed by time-of-flight low-energy atom scattering spectroscopy (TOFLAS) and X-ray photoelectron spectroscopy (XPS). The AlN layer was intentionally oxidized via air exposure during film growth. The GaN surface subjected to the oxidization process had the +c surface. Secondary-ion mass spectrometry measurements indicated a high oxygen concentration after the intentional oxidization. However, the intentional oxidization degraded the crystallinity of the GaN/AlN layer. By changing the oxidization point and repeating the GaN/AlN growth, the crystallinity of GaN was recovered. Such polarity control of GaN on Si grown by sputtering shows strong potential for the fabrication of large-diameter +c-GaN template substrates at low cost.

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The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

Cited by 22 publications

References 22 publications

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

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