Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed, Kawsar; Dahal, R.; Weltz, Adam; Lu, Jiguang; Danon, Y.; Bhat, Ishwara B.

doi:10.1063/1.4962831

Cited by 75 publications

(61 citation statements)

References 26 publications

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“…Ultraviolet photodetectors based on hybrid graphene and ZnO quantum dots or nanorod have exhibited a high photoresponsivity of up to 1.1 × 10 4 A W −1 . These high photoresponsivity photodetectors with the photodetection bandwidth from ultraviolet to visible were realized based on 2D materials such as h‐BN, GaS, GaSe, GaTe, GeS, GeSe, InSe, and their hybrid structures and heterostructures …”

Section: Photodetectors Based On 2d Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The bandgap of h‐BN is located in the MUV range, resulting in a high‐performance, solar‐blind, deep UV photodetector . Deep UV photodetectors were demonstrated by the h‐BN based M‐S‐M structure (Ni/Au) with the h‐BN thin film on a Mo substrate, as shown in Figure i,j. The bulk h‐BN can also be exfoliated into thin layers, which have been widely used as ultraflat insulating substrates, ultrathin tunneling barriers, electrostatic gating and encapsulation materials .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,067

872

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2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201803807. atomic layer, while these atomically thin layers are bonded together by weak van der Waals interactions along the third dimension perpendicular to the 2D plane. The weak interlayer interaction makes it possible to exfoliate bulk crystals into isolated thin 2D flakes and even a single atomically thin layer.A photodetector is a device that can convert a light signal into an electrical signal. High performance photodetectors play important roles in many fields of our daily life, including electro-optical displays, imaging, environment monitoring, optical communication, military, security checking and so forth. 2D materials, as one of most competitive materials for designing photodetectors, have been demonstrated with remarkable characteristics, including broad detection waveband covering the wavelengths from UV to terahertz frequencies (THz, 10 12 Hz), ultrahigh photoresponsivity, polarization sensitive photodetection, high-speed photoresponse, high spatially resolved imaging, etc. Thanks to the recently developed dry transfer technique, [1] various heterostructures based on 2D materials have been designed and fabricated with desirable band alignments. Photodetectors based on these heterostructures have exhibited enhanced performances like high photovoltaic external quantum efficiency up to 30% for graphene-WS 2 -graphene, [2] ultrahigh photoresponsivity up to ≈10 10 A W −1 for graphene-MoS 2 , [3] ultrahigh photogain ...

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Section: Photodetectors Based On 2d Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,067

872

View full text Add to dashboard Cite

show abstract

“…The single‐crystalline boron nanosheets with high quality are prepared by a vapor‐solid process and it can realize large‐scale production. In addition, 2D boron has been combined with semiconductors to form heterojunction UV photodetector 103,104…”

Section: Materials For Heterojunction Uv Pdsmentioning

confidence: 99%

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Chen

Ouyang

Yang

et al. 2020

Adv Funct Materials

316

206

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Ultraviolet photodetectors (UV PDs) with "5S" (high sensitivity, high signal-tonoise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize highperformance UV PDs, heterojunctions are created to form a built-in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice-matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.

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“…In addition to providing an ideal interface with other 2D materials, this simple electronic structure also gives rise to deep ultraviolet emission in bulk hBN [14] and room-temperature quantum emission in single-layer hBN [15]. The optical gap in bulk hBN is on the order of 6 eV but the detailed nature of the VB to CB transition has been debated [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of exfoliated and epitaxial hexagonal boron nitride

Koch

Katoch

Moser

et al. 2018

Phys. Rev. Materials

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Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes of hBN have been extensively studied using electron transport and optical probes, detailed experimental measurements of the energy-and momentumdependent electronic excitation spectrum are lacking. Here, we directly determine the full valence band (VB) electronic structure of micron-sized exfoliated flakes of hBN using angle-resolved photoemission spectroscopy with micrometer spatial resolution. We identify the π-and σ-band dispersions, the hBN stacking order and determine a total VB bandwidth of 19.4 eV. We compare these results with electronic structure data for epitaxial hBN on graphene on silicon carbide grown in situ using a borazine precursor. The epitaxial growth and electronic properties are investigated using photoemission electron microscopy. Our measurements show that the fundamental electronic properties of hBN are highly dependent on the fabrication strategy.

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Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Cited by 75 publications

References 26 publications

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials, Integrations, and Applications

Electronic structure of exfoliated and epitaxial hexagonal boron nitride

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