Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

Nagata, Takahiro; Suemoto, Yuya; Ueoka, Yoshihiro; Mesuda, Masami; Sang, Liwen; Chikyow, Toyohiro

doi:10.1021/acsomega.2c00957

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…GaN [0001] is parallel to Si [111], which is the perpendicular direction of the Si substrate surface. GaN [11][12][13][14][15][16][17][18][19][20][21] is parallel to Si. [1][2][3][4][5][6][7][8][9][10] An allsputtered epitaxial GaN/AlN/Si (111) structure was obtained below a substrate temperature of 650 °C.…”

Section: Gan Film Growth On Aln Layermentioning

confidence: 99%

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Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate

Nagata¹,

Suemoto²,

Ueoka³

et al. 2021

Jpn. J. Appl. Phys.

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The effect of an Al buffer layer on the growth of AlN on a Si (111) substrate was investigated to develop an all-sputtered GaN film on a Si (111) template substrate. The X-ray diffraction method revealed an obvious improvement in the crystallinity of an AlN layer on the initial layer. At the interface structure, AlN film without the Al buffer layer exhibited surface nitridation of the Si surface, which degraded the AlN crystal growth. After investigating various growth conditions such as substrate temperature and layer thickness, we achieved the all-sputtered epitaxial growth of a GaN/AlN/Si substrate. The substrate temperature was below 650 °C, and the total thickness was less than 200 nm, which is beneficial as regards the cost efficiency of the template substrate for nitride semiconductors.

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Section: Gan Film Growth On Aln Layermentioning

confidence: 99%

“…Part of this study was presented at the 33rd International Microprocesses and Nanotechnology Conference (MNC 2020). 19) To this paper, we have added a detailed analysis of the chemical bonding state at the AlN/Si interface to make it possible to understand the interface reaction.…”

Section: Introductionmentioning

confidence: 99%

Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate

Nagata¹,

Suemoto²,

Ueoka³

et al. 2021

Jpn. J. Appl. Phys.

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Improving the rectification characteristics of GaN/Si heterojunction by constructing an interpenetrating two-phase interface layer

Zhang,

Wen,

Xing

et al. 2024

Applied Surface Science

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High-quality GaN thin film deposition at low temperature by ECR plasma-assisted sputter deposition method and its dependence of sapphire substrate misorientation angle

Torii,

Matsui

2024

Journal of Vacuum Science &Amp; Technology A

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Gallium nitride (GaN) thin films were deposited by electron cyclotron resonance (ECR) plasma-assisted sputtering, which combines GaN-magnetron sputtering with argon and nitrogen plasma assistance using an ECR high-density plasma. GaN films on the misorientation-angle-0.0° (just) sapphire substrate showed very good crystallinity with a GaN(0002) rocking curve (XRC) full width at half maximum (FWHM) of 0.042° and epitaxial growth confirmed by φ-scan measurements at a low heating temperature of 350 °C. However, the GaN thin film had a rough surface with circular grains about 100 nm in diameter and a surface root-mean-square height (Sq) of 1.21 nm. Therefore, the misorientation angle of the sapphire substrate was varied from 0.2° to 10.0°. As a result, the grains observed on the just substrate disappeared at 0.5°. The film had Sq: 0.33 nm, and the FWHM of the XRC of GaN(0002) was 0.066°, indicating improved surface flatness while maintaining crystallinity. This is considered to be due to the step flow, which promotes ECR plasma-assisted diffusion on the terrace even at the low temperature of 350 °C. The polarity of the GaN thin film was analyzed by time-of-flight atomic scattering surface analysis and found to be N-polar on all substrates.

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Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

Cited by 3 publications

References 42 publications

Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate

Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate

Improving the rectification characteristics of GaN/Si heterojunction by constructing an interpenetrating two-phase interface layer

High-quality GaN thin film deposition at low temperature by ECR plasma-assisted sputter deposition method and its dependence of sapphire substrate misorientation angle

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