We have fabricated high-performance ultraviolet (UV) detectors with high-quality undoped and B-doped homoepitaxial diamond layers which were sequentially grown on a high-pressure/high-temperature-synthesized (HPHT) type-Ib (100) substrate by means of a high-power microwave-plasma chemical vapor deposition method. The detector performance measured had large quantum efficiencies due to an effective built-in current amplification function, fast temporal responses, and high UV/visible sensing ratios although the HPHT substrate used had considerable amounts of various defects inducing visible light absorptions and slow detector responses. The usefulness of the bilayer detector structure employed is discussed.
The double-gate drive is a remarkable gate control technique for dramatically reducing turn-off loss in Si-insulated gate bipolar transistors (IGBT) by increasing dV
CE/dt. However, no detailed analysis of the difference of turn-off mechanism according to the difference in dV
CE/dt between double-gate drive and conventional gate drive has been reported. The double-gate (DG) drive allows the dV
CE/dt of IGBTs to increase beyond the maximum dV
CE/dt of 7000 V μs−1 in conventional gate drives. Furthermore, the influence of relations between gate-drive timings and dV
CE/dt on turn-off operations were confirmed in the case of three different DG IGBT structures.
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