2009
DOI: 10.1063/1.3143621
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Characterization of diamond ultraviolet detectors fabricated with high-quality single-crystalline chemical vapor deposition films

Abstract: We have fabricated high-performance ultraviolet (UV) detectors with high-quality undoped and B-doped homoepitaxial diamond layers which were sequentially grown on a high-pressure/high-temperature-synthesized (HPHT) type-Ib (100) substrate by means of a high-power microwave-plasma chemical vapor deposition method. The detector performance measured had large quantum efficiencies due to an effective built-in current amplification function, fast temporal responses, and high UV/visible sensing ratios although the H… Show more

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Cited by 40 publications
(18 citation statements)
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“…This has caused major technological problems for instrumentation development, where the detector is the essential element of every astronomical experiments [1]. Many wide bandgap semiconductors with good optical properties, such as GaN [2], [3], ZnO [4], [5], and diamond [1], [6], [7], have been used for UV detectors, but few concerns with 2-D boron nitride nanosheets (BNNSs) even though their band gaps are larger and their chemical and thermal properties are more stable than that of most of the traditional semiconductors. The main obstacle is in growing high purity of these 2-D BN sheets with minimal defects and dislocations on the substrate material [8], [9].…”
Section: Introductionmentioning
confidence: 99%
“…This has caused major technological problems for instrumentation development, where the detector is the essential element of every astronomical experiments [1]. Many wide bandgap semiconductors with good optical properties, such as GaN [2], [3], ZnO [4], [5], and diamond [1], [6], [7], have been used for UV detectors, but few concerns with 2-D boron nitride nanosheets (BNNSs) even though their band gaps are larger and their chemical and thermal properties are more stable than that of most of the traditional semiconductors. The main obstacle is in growing high purity of these 2-D BN sheets with minimal defects and dislocations on the substrate material [8], [9].…”
Section: Introductionmentioning
confidence: 99%
“…To monitor the current characteristics, the MI cable was connected to measure the leakage current and photo-current with the Keithley 6487 pico-ammeter (Tektronix, Inc., Beaverton, OR). The leakage current measurement was performed under the conditions of an applied 50-V bias [15,16], and the photo-current was measured under 254-nm UV irradiation. This specific wavelength was chosen because of the characteristic response of the CVD diamond within a wavelength range of 200 to 300 nm [17,18].…”
Section: Jrprmentioning
confidence: 99%
“…Simulations were compared with these measurements for the fundamental mode 22.3 GHz. The loss tangent was calculated using (7).…”
Section: Measurement Setupmentioning
confidence: 99%
“…Some electronic applications of synthetic diamond are already under development, including high-power switches at power stations, high-frequency fieldeffect transistors and light-emitting diodes. [5][6][7][8] Because of its unique combination of thermal and chemical stability, low thermal expansion and high optical transparency over a wide spectral range, synthetic diamond is becoming a popular material for optical applications. 9 Polycrystalline diamond is a cheaper alternative compared to the crystalline material and we characterize a sample of 10.086 ± 0.001 mm diameter and 1.227 ± 0.001 mm thick over a very broad temperature range.…”
Section: Introductionmentioning
confidence: 99%