Development of 2-D Boron Nitride Nanosheets UV Photoconductive Detectors

Aldalbahi, Ali; Feng, Peter

doi:10.1109/ted.2015.2423253

Cited by 47 publications

(59 citation statements)

References 20 publications

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“…This phenomenon is very different from our previous work related to either SiC based deep UV detector 26 or BN based deep UV detector. 36 The fabricated prototype appears to have good features in repeatability and stability. The obtained UV light responsivity in the fabricated GaN based photodetector is up to 354 mA/W at a bias of 2V and higher yields can be obtained when bias slightly increases but it would also result in high dark current.…”

Section: Resultsmentioning

confidence: 96%

“…The lack of a desirable sensitivity in super thin BN sheets based photodetectors can be attributed to the fact that deep UV light has a large penetration length and secondly, tunneling effect present in super thin BN sheets could result in a poor conversion efficiency between the deep UV light and the photocurrent signal. 36 Regarding longer time-scale behavior, the response time appears to improve (becomes faster) with the passage of each cycle, displaying significant improvement by the 4 th on-off cycle when compared to the first two. This phenomenon is very similar to the results obtained from SiC based deep UV detectors and it is attributed to humidity effect.…”

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

“…Detailed description of light source and light intensity can be found in our previous papers. 26,36 Briefly, three types of deep UV light lamps with different wavelengths were used for the characterizations of the responsivity of the doped GaN based UV photodetectors. Light intensity on the surface of the detector was controlled by variation of the distance (d) between the prototype and the UV light source.…”

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

“…The definition of response time was based on the time duration for reaching 90% of the full response of the detector. Several works, including ours, were performed on studies of response and recovery times of deep UV photodetector, 36 from which it was determined that the actual response and recovery times should be shorter. This is 2016) because of the time delay experienced by the UV lamp in reaching full intensity after switching on, and florescence after switching off.…”

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

“…This is 2016) because of the time delay experienced by the UV lamp in reaching full intensity after switching on, and florescence after switching off. From our previous boron nitride (BN) based UV detector, 36 we already knew that super thin BN sheets based photodetector would have much quicker/shorter response time than that of the thick BN film based detector, but significantly less sensitivity. The lack of a desirable sensitivity in super thin BN sheets based photodetectors can be attributed to the fact that deep UV light has a large penetration length and secondly, tunneling effect present in super thin BN sheets could result in a poor conversion efficiency between the deep UV light and the photocurrent signal.…”

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

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Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

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Section: Resultsmentioning

confidence: 96%

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

Section: Characterizations Of the Prototype's Responsivitymentioning

confidence: 99%

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Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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Two‐Dimensional Hexagonal Boron Nitride and Borophenes

Suhail

Lahiri

2020

Layered 2D Advanced Materials and Their Allied Applications

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Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Long

Wang

Fang

et al. 2018

Adv Funct Materials

1,055

872

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2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure-of-merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization-sensitive detection are pointed out on the basis of the state-of-the-art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high-performance photodetectors is given to provide a guideline for the future development of this fast-developing field.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201803807. atomic layer, while these atomically thin layers are bonded together by weak van der Waals interactions along the third dimension perpendicular to the 2D plane. The weak interlayer interaction makes it possible to exfoliate bulk crystals into isolated thin 2D flakes and even a single atomically thin layer.A photodetector is a device that can convert a light signal into an electrical signal. High performance photodetectors play important roles in many fields of our daily life, including electro-optical displays, imaging, environment monitoring, optical communication, military, security checking and so forth. 2D materials, as one of most competitive materials for designing photodetectors, have been demonstrated with remarkable characteristics, including broad detection waveband covering the wavelengths from UV to terahertz frequencies (THz, 10 12 Hz), ultrahigh photoresponsivity, polarization sensitive photodetection, high-speed photoresponse, high spatially resolved imaging, etc. Thanks to the recently developed dry transfer technique, [1] various heterostructures based on 2D materials have been designed and fabricated with desirable band alignments. Photodetectors based on these heterostructures have exhibited enhanced performances like high photovoltaic external quantum efficiency up to 30% for graphene-WS 2 -graphene, [2] ultrahigh photoresponsivity up to ≈10 10 A W −1 for graphene-MoS 2 , [3] ultrahigh photogain ...

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Development of 2-D Boron Nitride Nanosheets UV Photoconductive Detectors

Cited by 47 publications

References 20 publications

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Two‐Dimensional Hexagonal Boron Nitride and Borophenes

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

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