Analysis of dependence of dV _CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor

Abstract

The double-gate drive is a remarkable gate control technique for dramatically reducing turn-off loss in Si-insulated gate bipolar transistors (IGBT) by increasing dV CE/dt. However, no detailed analysis of the difference of turn-off mechanism according to the difference in dV CE/dt between double-gate drive and conventional gate drive has been reported. The double-gate (DG) drive allows the dV CE/dt of IGBTs to increase beyond the maximum dV CE/dt of 7000 V μs−1 in conventional gate drives. Furthermore, the influence of relations between gate-drive timings and dV CE/dt on turn-off operations were confirmed in the case of three different DG IGBT structures.

Structural parameter analysis on 6.5 kV integrated time and space carrier controllable dual-gate HiGT (i-TASC)

“…Dual-gate IGBTs, [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] which have two independent control gates, can further reduce E off by suppressing the stored carrier density in the n− drift region prior to the turn-off switching. We proposed an integrated time and space carrier controllable dual-gate HiGT (i-TASC 31) ) that has two different hole injection efficiency regions within one chip and demonstrated that the trade-off between V CEsat and E off can be greatly improved.…”