Walking is a daily activity that requires an appropriate crosswalk as a key part of the provision of safe transportation infrastructure. In this paper, we design and develop a portable smart wireless control system for pedestrian crossing areas to manage the traffic automatically and allow the pedestrian, like school children, to cross the road safely and effortlessly. The system incorporates the concept of smart sensing to detect the presence of pedestrians and in turn, automatically controls the crosswalk traffic lights. The system composes of two Arduino microcontrollers, two infrared PIR motion sensors, and a bidirectional wireless communication link based on Bluetooth for mitigating wiring installation and transmitting the signal among traffic light units on both roadsides. The system is fabricated and implemented as a portable LED-based traffic light testbed. The developed system is tested and validated in a real environment with a 6 m road width on the university campus. According to the obtained results, the system worked effectively and fulfilled the design criteria where the communication between both sides lights is successfully functioning and the PIR sensors can accurately detect the existence of pedestrians. The developed system is cost-effective, energyefficient, easy to install, and maintenance-free.
In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
This paper presents the temperature characteristics of silicon nanowire transistors (SiNWTs) and examines the effect of temperature on transfer characteristics, threshold voltage, I(ON)/I(OFF) ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS). The (MuGFET) simulation tool was used to investigate the temperature characteristics of a transistor. The findings reveal the negative effect of higher working temperature on the use of SiNWTs in electronic circuits, such as digital circuits and amplifiers circuits, because of the lower I(ON)/I(OFF) ratio, higher DIBL, and higher SS at higher temperature. Moreover, the ON state is the optimum condition for using a transistor as a temperature nano-sensor.
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