Effect of Temperature on the Characteristics of Silicon Nanowire Transistor

Hashim, Yasir; Sidek, Othman

doi:10.1166/jnn.2012.6598

Cited by 16 publications

(9 citation statements)

References 11 publications

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“…3b, which is higher than, at least compared to, most of conventional thermosensitive materials. For example, TCR for most metals and other conductive materials is between 0.1 and 1% K −1 [52][53][54] , and most oxide ceramics 55,56 and siliconbased electronics [57][58][59][60][61][62] show the TCR value of 1-4% K −1 at room temperature. This fact indicates that the DNTT OFETs with proper grain size achieve high thermo-sensitivity.…”

Section: Resultsmentioning

confidence: 99%

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

et al. 2021

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The temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors.

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Section: Resultsmentioning

confidence: 99%

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

et al. 2021

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“…Ref. [25] simulated the temperature effects on the transfer (Id-Vg) characteristics of SNWT at Vd=1V with diverse values of temperature (275, 300, 325, 350 and 375 K). Authors claimed that current-regulated to diameterincreased with increasing temperature at low Vg (>0.4V) and reducing at high Vg (<0.4V).…”

Section: Related Workmentioning

confidence: 99%

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

al.¹

2020

IJCDS

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This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested measuring the temperature sensitivity of SiNWT and GeNWT too. Three (3) electrical characteristics namely; (i) Subthreshold Swing (SS), (ii) Threshold voltage (V T ), and (iii) Drain-induced barrier lowering (DIBL) were evaluated and compared for both NWTs. The obtained results show that SiNWT achieved a better temperature sensitivity with channel length range between 25 nm to 105 nm at operation voltage (V DD ) range 1 V to 5 V nm. It is very clear that the temperature sensitivity increased remarkably by increasing channel length for both of SiNWT and GeNWT as well, but in SiNWT the sensitivity is more steady compared to GeNWT that showing less sensitivity. Moreover, SiNWT shows better result in terms of electrical performance metrics for various channel length at T = 300 K comparing with GeNWT.

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“…used within equipment) is the semiconductor temperature sensor [13]. Transistor-based temperature sensors are designed on the basis of the temperature characteristics of current-voltage curves of nanowire transistors [14][15][16][17][18][19][20]. A bipolar transistor can be used as a temperature sensor by connecting its base and collector and operating them in diode mode.…”

Section: Introductionmentioning

confidence: 99%

Temperature characteristics of FinFET based on channel fin width and working voltage

Atalla

Hashim

Ghafar

et al. 2020

IJECE

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This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).

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Effect of Temperature on the Characteristics of Silicon Nanowire Transistor

Cited by 16 publications

References 11 publications

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

Temperature characteristics of FinFET based on channel fin width and working voltage

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