The effect of neurite outgrowth of PC12 cells on collagen-coated glass plates under intermittent light irradiation at 525 nm and 0.4 mW/cm2 of intensity was investigated. Neurite outgrowth of PC12 cells was significantly suppressed when PC12 cells were cultivated under intermittent light irradiation with a total irradiation time of more than 2 min/h. No temperature increase was observed in the culture medium under either continuous or intermittent light irradiation. Therefore, suppression of neurite outgrowth under light irradiation was not due to the increase of temperature in the culture medium, but rather the effect of light on the PC12 cells, especially the signal transmittance of light to PC12 cells. The light irradiation interval also affected the neurite outgrowth of PC12 cells when the total irradiation time was constant. A high extension ratio of neurite outgrowth was observed under a long time interval of nonirradiation between light irradiations (1 min of irradiation every hour) as compared with frequent light irradiation intervals (5 s of irradiation every 5 min) with the same total irradiation period per hour. The neurite outgrowth ratio was thought to be dependent on the light intensity, the total time of light irradiation in the intermittent light irradiation, and the interval of light irradiation in the intermittent light irradiation.

We shall summarize studies on the dynamics of monatomic liquids, mainly liquid metals, using inelastic neutron scattering techniques. Many micrseopic properties of disorderedsystem like liquids which are not accessible by otbeer techniques can be investigated by properly designed neutron scattering experiments. Details of the physics of diffusion processes, that is of single-particle motion, CUI be revealed by incoherent quasi-elastie scattering. Coherent scattering can explore d a t i v e motions or collective modes and their damping mechaaism. Both aspects will be illustrated with a few examples of m e n t experiments.

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Deposition of silicon dioxide films on fluorinated amorphous carbon films (a-C:F) for low dielectric constant interlayer dielectrics was investigated. Both SiO2 and a-C:F films were deposited by helicon wave plasma enhanced chemical vapor deposition with C4F8 for a-C:F and SiH4+O2 mixtures for SiO2. The SiO2 films on the a-C:F films peeled off soon after deposition. However, the peeling was suppressed by inserting a thin a-C:H buffer layer grown from CH4 between them. The adhesion between the films was increased by making the stoichiometry of SiO2 Si-rich. It was found that the Si–C bonds formed at the interface increased the adhesion.

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