Activation energy for the <i>C</i>49-to-<i>C</i>54 phase transition of polycrystalline TiSi2 films with arsenic impurities

Matsubara, Y.; Horiuchi, T.; Okumura, K.

doi:10.1063/1.109269

Cited by 31 publications

(5 citation statements)

References 11 publications

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“…The formation of silicides was reported to be suppressed in As‐ and P‐rich substrates prepared by ion implantation . Moreover, the presence of excess dopants at concentrations above the solid solubility threshold is known to increase incubation time and inhibit silicide formation by increasing its activation energy .…”

Section: Resultsmentioning

confidence: 99%

“…The formation of silicides was reported to be suppressed in As-and P-rich substrates prepared by ion implantation. [14][15][16][17] Moreover, the presence of excess dopants at concentrations above the solid solubility threshold is known to increase incubation time and inhibit silicide formation by increasing its activation energy. [13,14] Although the solid solubility limit of P at 700 C equals 3 Â 10 20 atoms cm À3 , [18] we observed silicidation delay at P levels of !2 Â 10 20 atoms cm À3 , which was explained by the "snowplow effect."…”

Section: Resultsmentioning

confidence: 99%

“…[14][15][16][17] Moreover, the presence of excess dopants at concentrations above the solid solubility threshold is known to increase incubation time and inhibit silicide formation by increasing its activation energy. [13,14] Although the solid solubility limit of P at 700 C equals 3 Â 10 20 atoms cm À3 , [18] we observed silicidation delay at P levels of !2 Â 10 20 atoms cm À3 , which was explained by the "snowplow effect." At the onset of Ti silicide formation, a large number of Si atoms diffused into the Ti thin film to form a Ti-Si mixed layer, and P saturation occurred near the interface, since the solubility of P in the Ti silicide film is lower than that in Si.…”

Section: Resultsmentioning

confidence: 99%

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Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Park

2019

Physica Status Solidi (a)

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Herein, the effect of P concentration in highly P‐doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter‐deposited on P‐doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X‐ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P‐doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Park

2019

Physica Status Solidi (a)

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“…Once the C49-TiSi2 phase has formed, further annealing is required to obtain the polymorphic phase transformation to the C54-TiSi2 phase. The activation energy required to convert a thin film of C49-TiSi2 to C54-TiSi2 is 4-8 eV [17][18][19][20][21][22], depending on processing conditions, substrate, and type of dopant. This high activation energy requires that high-temperature annealing be used to completely convert the C49 phase into C54-TiSi2.…”

Section: Suicides For Salicide Applicationsmentioning

confidence: 99%

Silicides and local interconnections for high-performance VLSI applications

Mann

Clevenger

Agnello³

et al. 1995

IBM J. Res. & Dev.

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As the minimum VLSI feature size continues to scaie down to the 0.1-0.2-ju.m regime, the need for iow-resistance iocai interconnections wiii become increasingiy critical. Although reduction in the MOSFET channel length will remain the dominant factor in achieving higher circuit performance, existing local interconnection materials will impose greater than acceptable performance limitations. We review the state-of-the-art salicide and polycide processes, with emphasis on work at IBM, and discuss the limitations that pertain to future implementations in high-performance VLSI circuit applications. A brief review of various silicide-based and tungsten-based approaches for forming local interconnections is presented, along with a more detailed description of a tungsten-based "damascene" local interconnection approach.

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“…10 More importantly, incomplete transformation from C49 to C54 TiSi 2 phase occurs when the linewidth is scaled down below 2 m because of the lack of nucleation center in the narrow lines, especially the triple-C49 grain boundaries. [11][12][13][14] In addition, the creep-up phenomenon during the formation of TiSi 2 silicide may form a bridge between the gate and source/drain regions in submicrometer devices, causing device failure. 15 Unlike TiSi 2 , CoSi 2 has neither adverse linewidth dependence nor creep-up phenomenon.…”

mentioning

confidence: 99%

Formation of NiSi-Silicided p[sup +]n Shallow Junctions Using Implant-Through-Silicide and Low-Temperature Furnace Annealing

Wang

Lin

Chen

2003

J. Electrochem. Soc.

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NiSi-silicided p+normaln shallow junctions are fabricated using BF2+ implantation into/through thin NiSi silicide layer (implant-through-silicide technology) followed by low-temperature furnace annealing (from 550 to 800°C). The NiSi film agglomerates following a thermal annealing at 600°C and may result in the formation of discontinuous islands at a higher temperature. The incorporation of fluorine atoms in the NiSi film can retard the formation of film agglomeration and thus improving the film’s thermal stability. The forward ideality factor of about 1.02 and the reverse current density of about 1 nA/cm2 can be attained for the NiSi false(310Åfalse)/p+normaln junctions fabricated by BF2+ implantation at 35 keV to a dose of 5×1015 cm−2 followed by a 650°C thermal annealing; the junction formed is about 60 nm measured from the NiSi/Si interface. Activation energy measurement indicates that the reverse bias junction currents are dominated by the diffusion current, indicating that most of the implanted damages can be recovered after annealing at a temperature as low as 650°C. © 2003 The Electrochemical Society. All rights reserved.

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Activation energy for the C49-to-C54 phase transition of polycrystalline TiSi2 films with arsenic impurities

Abstract: Articles you may be interested inIn situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation

Cited by 31 publications

References 11 publications

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Silicides and local interconnections for high-performance VLSI applications

Formation of NiSi-Silicided p[sup +]n Shallow Junctions Using Implant-Through-Silicide and Low-Temperature Furnace Annealing

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