Low-k fluorinated amorphous carbon interlayer technology for quarter micron devices

Novel Low k Dielectrics Based on Diamondlike Carbon Materials

“…Diamondlike carbon (DLC) has been considered a possible low k dielectric, but the films have either been found not to be stable above 350°C, [2][3][4] or have dielectric constants of about six. In order to improve the switching performances of future ULSI circuits insulators with dielectric constants (k) significantly lower than that of SiO are needed in to reduce these capacitances.…”

“…In order to improve the switching performances of future ULSI circuits insulators with dielectric constants (k) significantly lower than that of SiO are needed in to reduce these capacitances. 4 In order to integrate a new low k dielectric material in ULSI devices, such a material has to satisfy a number of requirements, among which are: electrical (low dielectric constant, low dissipation factor), thermal (stability at 400°C), mechanical (low stresses), adhesion, and compatibility with other materials, etc. However, integration of the dielectrics in ULSI chips requires thermal stability at temperatures of at least 400°C.…”

Low and Ultralow Dielectric Constant Films Prepared by Plasma‐enhanced Chemical Vapor Deposition

“…FDLC fi lms, generally characterized by lower dielectric constants then DLC, have been deposited from fl uorocarbons, mixtures of fl uorocarbons with hydrogen, or mixtures of fl uorocarbons with hydrocarbons, using parallel plate RF PECVD reactors [26,27] or highdensity plasma reactors [28,29]. Contrary to DLC, low-k FDLC fi lms can be deposited at temperatures up to 400°C and on either electrode of the parallel plate reactor.…”

“…The deposition power had a similar effect on the dielectric constant, which increased with increasing deposition power. Dielectric constants as low as 2.3 have been reported by other groups [27,28]. The thermal stability of the FDLC fi lms was initially investigated by measuring changes of fi lm thickness after annealing at 400°C for 4 h in nitrogen.…”

“…While other authors claimed to have fabricated FDLC fi lms thermally stable at 400°C [11,27,35], the stability of these materials has not been proven by integration with other fi lms at this temperature. Initial integration of FDLC with Al in a gap fi ll process [28] and with Cu in a damascene process [29] has been demonstrated only to temperatures below 350°C.…”