Low and Ultralow Dielectric Constant Films Prepared by Plasma‐enhanced Chemical Vapor Deposition

Grill, A.

doi:10.1002/9780470017944.ch1

Cited by 24 publications

(16 citation statements)

References 31 publications

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“…A wide variety of organosilane precursors has been used to produce low-k SiCOH (4). In general, compounds with less than one oxygen atom per silicon in their structure (e.g., trimethylsilane, tetramethylsilane, dimethylphenylsilane, diphenylsilane, diphenylmethylsilane, and hexamethyldisiloxane), codeposited with an oxidant (e.g., N 2 O or O 2 ), are preferred (60,61). Radio frequency (13.56 MHz) plasma-assisted deposition of tetramethylsilane with N 2 O or O 2 produced the first thermally stable SiCOH material with a dielectric constant of 3.1 (60)(61)(62)(63).…”

Section: Inorganic Materialsmentioning

confidence: 99%

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Kohl

2011

Annu. Rev. Chem. Biomol. Eng.

111

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Future integrated circuits and packages will require extraordinary dielectric materials for interconnects to allow transistor advances to be translated into system-level advances. Exceedingly low-permittivity and low-loss materials are required at every level of the electronic system, from chip-level insulators to packages and printed wiring boards. In this review, the requirements and goals for future insulators are discussed followed by a summary of current state-of-the-art materials and technical approaches. Much work needs to be done for insulating materials and structures to meet future needs.

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Section: Inorganic Materialsmentioning

confidence: 99%

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Kohl

2011

Annu. Rev. Chem. Biomol. Eng.

111

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“…This statement is especially applicable to microelectronics, where dense organosilicate materials containing varying amount of Si-Me substitutents (k = 2.7-3.0) are currently used as the insulating layers in 90 nm interconnect technology, [12,13] and porous analogs will be implemented in future electronic devices. [14,15] Escalating integration issues are anticipated for materials with increased porosity since many of the integration processes require good mechanical properties (e.g. chemical mechanical polishing, chip dicing, wire bonding, etc).…”

mentioning

confidence: 99%

Molecular Network Reinforcement of Sol–Gel Glasses

et al. 2007

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Nanoporous materials are often accessed by a supramolecular approach using soft matter templates. Porous silicates and organosilicates synthesized by wet chemistry processes have been intensively studied for the last 20 years. Due to the versatility of the sol-gel chemistry, thermally sensitive bonds, organic molecules [1] and polymers [2] can be introduced either at the pore surfaces or in the network, and pore size, distribution and organization can be controlled as well.[3] The combination of the most important properties of the inorganic and organic components, coupled with the control of the "empty space" has suggested many potential applications for these materials.[4] For example, several thin-film applications in emerging optical, electronic, biological and filtration technologies have been envisioned. [5,6] Until now, a major roadblock in the realization of technological applications for these materials seems to be their poor mechanical properties. Indeed, the incorporation of pores into brittle glasses often has a catastrophic effect on their mechanical and fracture properties. This behavior is even more pronounced when moving from silicate to organosilicate materials (ORMOSILS) due to a decrease in network atom connectivity, impacting potential applications for these materials. A case in point is the observation that the fracture energy value, G c , for dense methylsilsesquioxane (MSSQ) glass is typically less than 5 J.m -2 , as compared to 10 J.m -2 for SiO 2 . [7] The presence of methyl substituents, while useful to lower the dielectric constant, generate free volume and impart hydrophobicity, simultaneously reduces the density, modulus, hardness and fracture energy. [7][8][9][10] We have recently demonstrated that these organosilicates show a strong power relationship dependence between film density and mechanical properties (e.g. modulus and fracture resistance), resulting in a rapid decay of the latter with increase in porosity. [7] For MSSQ materials, unfortunate consequences of this are: a) at low level of porosity the modulus decreases extremely rapidly (e.g. 50 % reduction at 15 vol.% porosity), b) at higher porosities (> 30 %), the modulus vs density curves tend to converge, abrogating any anticipated benefits by starting from dense materials with higher modulii.[11] Without acceptable fracture resistance, porous organosilicate glasses would be of little utility in any of the applications cited above. This statement is especially applicable to microelectronics, where dense organosilicate materials containing varying amount of Si-Me substitutents (k = 2.7-3.0) are currently used as the insulating layers in 90 nm interconnect technology, [12,13] and porous analogs will be implemented in future electronic devices. [14,15] Escalating integration issues are anticipated for materials with increased porosity since many of the integration processes require good mechanical properties (e.g. chemical mechanical polishing, chip dicing, wire bonding, etc). [16,17] Mechanical instability and the associated...

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“…Three types of porous low- k dielectrics were deposited on Si substrates by plasma-enhanced chemical vapor deposition (PECVD) from alkyl silane precursors followed by UV-assisted thermal curing. , The films had a thickness of approximately 100 nm and dielectric constants of 2.0, 2.5, and 3.0. They are labeled in this work as lowk-2.0, lowk-2.5, and lowk-3.0, respectively.…”

Section: Methodsmentioning

confidence: 99%

Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers

et al. 2014

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Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM) precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii, namely, 1.7, 0.7, and lower than 0.5 nm. The low-k dielectrics were first pretreated with either O2 or He/H2 plasma in order to generate silanol groups on the hydrophobic pristine surface. Subsequently, the SAMs were chemically grafted to the silanol groups on the low-k surface. The SAMs distribution in the low-k films depends on the pore diameter: if the pore diameter is smaller than the size of the SAMs precursors, the SAM molecules are confined to the surface, while if the pore diameter exceeds the van der Waals radius of the SAMs precursor, the SAMs molecules reach deeper in the dielectric. In the latter case, when the pore sidewalls are made hydrophilic by the plasma treatment, the chemical grafting of the SAM precursors follows the profile of the generated silanol groups. The modification depth induced by the O2 plasma is governed by the diffusion of the oxygen radicals into the pores, which makes it the preferred choice for microporous materials. On the other hand, the vacuum ultraviolet (VUV) light plays a critical role, which makes it more suitable for hydrolyzing mesoporous materials. In addition to the density of the surface -OH groups, the nanoscale concave curvature associated with the pores also affects the molecular packing density and ordering with respect to the self-assembly behavior on flat surfaces. A simple model which correlates the low-k pore structure with the plasma hydrophilization mechanism and the SAMs distribution in the pores is presented.

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Low and Ultralow Dielectric Constant Films Prepared by Plasma‐enhanced Chemical Vapor Deposition

Cited by 24 publications

References 31 publications

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Molecular Network Reinforcement of Sol–Gel Glasses

Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers

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