2011
DOI: 10.1146/annurev-chembioeng-061010-114137
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Low–Dielectric Constant Insulators for Future Integrated Circuits and Packages

Abstract: Future integrated circuits and packages will require extraordinary dielectric materials for interconnects to allow transistor advances to be translated into system-level advances. Exceedingly low-permittivity and low-loss materials are required at every level of the electronic system, from chip-level insulators to packages and printed wiring boards. In this review, the requirements and goals for future insulators are discussed followed by a summary of current state-of-the-art materials and technical approaches… Show more

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Cited by 111 publications
(90 citation statements)
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References 102 publications
(99 reference statements)
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“…[42] Many dielectric polyimides have been created, and the original motivation for the development of polyimide dielectrics was as a lowcost alternative to on-chip silicon dioxide with high T g , high modulus, and low dielectric constant as compared with silicon dioxide. [43] The dielectric constants (ɛ r ) of the prepared fluorinated polyimides were determined in the range of 2.60-2.76, as shown in Table 4, which are lower than the non-fluorinated polyimides such as PMDA-ODA (3.16), [44] PI-POSS (2.65-3.22) [45], and PI/PSSQ (2.79-3.61) [46] nanocomposites, but comparable with other fluorinated polyimides. [18,19,23] The high electrical insulating and low dielectric constants of the fluorinated polyimides are mainly attributed to the high fluorine loadings in the polyimide backbones.…”
Section: Dielectric Properties and Water Absorption Of Pieismentioning
confidence: 99%
“…[42] Many dielectric polyimides have been created, and the original motivation for the development of polyimide dielectrics was as a lowcost alternative to on-chip silicon dioxide with high T g , high modulus, and low dielectric constant as compared with silicon dioxide. [43] The dielectric constants (ɛ r ) of the prepared fluorinated polyimides were determined in the range of 2.60-2.76, as shown in Table 4, which are lower than the non-fluorinated polyimides such as PMDA-ODA (3.16), [44] PI-POSS (2.65-3.22) [45], and PI/PSSQ (2.79-3.61) [46] nanocomposites, but comparable with other fluorinated polyimides. [18,19,23] The high electrical insulating and low dielectric constants of the fluorinated polyimides are mainly attributed to the high fluorine loadings in the polyimide backbones.…”
Section: Dielectric Properties and Water Absorption Of Pieismentioning
confidence: 99%
“…However, conventional PI dielectrics usually have k values around 3.0, which cannot meet the rapid development of ULSI assembly. For example, according to the prediction of International Technology Roadmap for Semiconductors (ITRS), by 2016, a k value below 2.0 at 1 GHz and a dielectric loss below 0.003 have to be met for the ILDs [7]. It has been proven that the common methodologies reducing the k values for conventional PIs (k ≈ 3.0), including introduction of substituents with low molar polarizability (fluorinated groups, alicyclic groups, etc.)…”
Section: Introductionmentioning
confidence: 99%
“…14 The stiffness was defined as the initial slope of the unloading curve, and the reduced modulus (E r ) was calculated using Equation 4, where β is a geometrical constant. The elastic modulus of the film (E f ) was calculated using Equation 5, where E i is the elastic modulus of the diamond tip (2015) (1140 GPa), and ν f and ν i are the Poisson's ratios of the film and tip, respectively.…”
Section: Methodsmentioning
confidence: 99%