Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28Si/28SiO2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.

The orientation of cylinder-forming poly(styrene-block-methyl methacrylate) [P(S-b-MMA)] was investigated on two sets of polymeric surface treatments: 10 para-substituted polystyrene derivatives with <10 mol % poly(4-vinylbenzyl azide) and a series of poly(styrene-random-4-vinylbenzyl azide) [P(S-r-VBzAz)] copolymers with 5-100 mol % poly(4-vinylbenzyl azide). The copolymers were spin-coated to form thin films and then cross-linked by heating. The resulting films exhibited a range of surface tensions from 21 to 45 dyn/cm. Perpendicular orientation of P(S-b-MMA) cylinders was achieved with poly(p-bromostyrene) and all the [P(S-r-VBzAz)] copolymer surface treatments, most notably the homopolymer of poly(4-vinylbenzyl azide). Films made from these simple copolymers are as effective as random terpolymer alignment layers commonly made from both block monomers and a cross-linkable monomer.

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A hard x-ray waveguide capable of reducing a 13 keV monochromatic beam in one direction from 30 to only 0.1 μm has been characterized with synchrotron radiation. The guiding structure consisted of a carbon layer sandwiched between two Ni layers sputter-deposited onto float glass. A beam exiting at the end of the guide in guiding direction was observed when a resonance effect due to the formation of x-ray standing waves in the total reflection region takes place. The measured beam divergence (1.3 mrad) agrees with expectations. The total efficiency (exiting photon flux/incident photon flux) can ideally exceed 10−2 but is only 10−4 for this first prototype.

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A positive-tone, aqueous base soluble, polynorbornene (PNB) dielectric formulation has been developed. The photolithographic solubility switching mechanism is based on diazonaphthoquinone (DNQ) inhibition of PNB resin functionalized with pendent fluoroalcohol and carboxylic acid substituents. The optical contrast (at 365 nm) was found to be 2.3. The maximum height-towidth aspect ratio of developed line and space features was 3 : 2. The sensitivity, D 100 , of a formulation containing 20 pphr of DNQ photoactive compound (PAC) was calculated to be 408 mJ cm À2 . The effects of the PAC molecule structure on miscibility and dissolution of the photosensitive films in aqueous base developer were studied. The effect of the monomer composition of the PNB polymer on the dissolution rate of the formulated PNB resin was evaluated. A unique dissolution and swelling behavior was observed. The effect is attributed to a copolymer synthesized with two monomers each of which is susceptible to deprotonation in aqueous base. FTIR measurements showed that the pure PNBFA has a small percentage of free hydroxyl groups, which did not change appreciably by the addition of PAC to the mixture.The polymers used in this study were homopolymers or copolymers of functionalized PNB monomers. 10 Functionalized monomers, a norbornene fluoroalcohol (NBFA) and a norbornene carboxylic acid (NBCBA), impart solubility in aqueous base. The NBCBA functionality also provides sites for polymer crosslinking with small-molecule, multifunctional epoxy additives.

The successful synthesis, characterization, and directed self‐assembly of a silicon‐containing block copolymer, poly(styrene‐block‐trimethylsilylisoprene) (P(S‐b‐TMSI)), which has much higher oxygen etch contrast than the de facto standard, poly(styrene‐block‐methyl methacrylate) is reported. A Sakurai, Grignard‐type coupling reaction provided the key monomer in good yield. Living anionic polymerization was employed to prepare the block copolymer, which has very low polydispersity. P(S‐b‐TMSI) was successfully ordered and oriented by directed self‐assembly. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013

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