Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric  Constant Interlayer Dielectrics

Endo, Kazuhiko; Tatsumi, Toru; Matsubara, Y.; Horiuchi, T.

doi:10.1143/jjap.37.1809

Cited by 35 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3][4][5][6][7][8][9][10][11][12][13][14] These polymer-like films can have high ratios of F/CϷ1 resulting in low dielectric constants of Ϸ2.0-2.3, but high amounts of hydrogen are present in these films due to the use of hydrogen-containing precursors during deposition. The role of hydrogen in determining the film properties has not been investigated up to now.…”

Section: Introductionmentioning

confidence: 99%

Ion beam deposition of fluorinated amorphous carbon

Ronning

Büttner

Vetter

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content.

show abstract

Section: Introductionmentioning

confidence: 99%

Ion beam deposition of fluorinated amorphous carbon

Ronning

Büttner

Vetter

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…But the relative permittivity of bulk SiO 2 is ϳ3.8 while the projected requirement for a low-permittivity material is ϳ2. 3 ͑Multiply the relative permittivity of any material by ⑀ 0 ϭ8.854 ϫ10 Ϫ12 F m Ϫ1 to get the permittivity of the material.͒ Although several candidate low-permittivity materials have been proposed, [4][5][6][7] no single material can satisfy all the requirements. 2,4,8 For instance, polymers have inherently low relative permittivity ͑between 1 and 4͒, but are plagued by poor mechanical and thermal properties and high moisture uptake.…”

Section: Introductionmentioning

confidence: 99%

Low-permittivity nanocomposite materials using sculptured thin film technology

Venugopal

Lakhtakia

Messier

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

The feasibility of using sculptured thin film technology to engineer multiphase low-permittivity (also called low-k) materials for microelectronic and electronic packaging applications is established via a numerical study. The chosen films are theoretically modeled as multiphase, uniaxial, dielectric nanocomposite materials and their anisotropic relative permittivity tensors are estimated using the Bruggeman formalism.

show abstract

“…Furthermore, the integration of a-C:F with three levels of aluminum interconnect has been demonstrated with an overall 50% reduction in the measured capacitance compared to SiO 2 . 17 This work focuses on the study of the thermal and chemical stability of the fluorinated amorphous carbon (a-C:F) films deposited by a novel cosputtering process using polytetrafluoroethylene ͑PTFE͒ and graphite targets. In addition to the dielectric constant, the thermal and chemical stability of these cosputtered a-C:F films are determined as a function of total fluorine concentration and deposition temperature using both x-ray photoelectron spectroscopy ͑XPS͒ and mass spectrometry.…”

Section: Introductionmentioning

confidence: 99%

Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride

Chang¹,

Krautter²,

Zhu³

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

We investigated the effects of heating and deposition of tantalum nitride on fluorinated amorphous carbon (a-C:F) thin films, deposited by a cosputtering process using polytetrafluoroethylene and graphite targets. Carbon is observed by x-ray photoelectron spectroscopy (XPS) in four distinct chemical states, C–C, C–F, C–F2, C–F3, and the relative intensity of C–Fx to C–C increases with increasing fluorine content and decreasing deposition temperature. Heat treatment of this material in vacuum up to 450 °C results in reduction of the intensities of C–Fx relative to that of C–C. The predominant desorbing masses detected by a mass spectrometer were consistent with CF3, CF, C3F5, CF2, COF, COF2, and Ar. The temperature at which desorbing CFx species are detected increases with decreasing fluorine concentration and increasing deposition temperature. This improved thermal stability is attributed to the decreasing amount of volatile, small molecular weight CFx species and more C–C crosslinking in the less fluorinated film. To integrate with copper metallization, the interface between a-C:F and tantalum nitride was studied by depositing tantalum nitride on a a-C:F films and monitoring the interfacial chemical reactions in situ using XPS. Substantial defluorination was observed upon deposition of tantalum nitride. This leads to the formation of tantalum fluoride, whose relatively high vapor pressure and susceptibility to hydrolysis could lead to delamination.

show abstract

Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics

Cited by 35 publications

References 12 publications

Ion beam deposition of fluorinated amorphous carbon

Ion beam deposition of fluorinated amorphous carbon

Low-permittivity nanocomposite materials using sculptured thin film technology

Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride

Contact Info

Product

Resources

About