Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Endo, Kazuhiko; Tatsumi, Toru; Matsubara, Y.

doi:10.1063/1.118490

Cited by 14 publications

(7 citation statements)

References 6 publications

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“…10͑a͔͒. 30 Likewise, Agraharam et al used high pressure capacitively coupled C 4 F 8 /Ar plasmas to produce FC films with dielectric constants ranging from 2.29 to 2.55 with F/C ϭ1.1-1.2. 28 Requirements for these materials include good insulating properties and chemical and physical inertness, along with selective binding of proteins.…”

Section: A C 3 Fmentioning

confidence: 99%

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Martin

Malkov

Butoi

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C 4 F 8 ∕ Ar and C F 4 ∕ H 2 based capacitively coupled plasmas Comparison of plasma chemistries and structure-property relationships of fluorocarbon films deposited from octafluorocyclobutane and pentafluoroethane monomers Materials deposited in continuous wave ͑cw͒ and pulsed low-pressure octafluoropropane (C 3 F 8 ) and octafluorocyclobutane (c-C 4 F 8 ) plasmas were characterized using Fourier transform infrared spectroscopy ͑FTIR͒, x-ray photoelectron spectroscopy, static contact angle measurements, spectroscopic ellipsometry, and scanning electron microscopy ͑SEM͒. Fluorocarbon ͑FC͒ materials deposited in pulsed plasmas were less crosslinked than those deposited in cw plasmas with equivalent input powers. Within each system, higher F/C ratio materials were deposited by lowering the plasma input power/duty cycle. Using downstream depositions had a similar effect on film composition, but also resulted in decreased deposition rates. SEM analysis showed that decreases in the flexibility of the fluorocarbon films were correlated with increases in the percent of crosslinking. Additionally, the smoothness of the film surfaces suggests that polymerization processes occur on the substrate surface. Overall, films deposited in C 4 F 8 plasmas were more crosslinked and less flexible than those deposited in C 3 F 8 plasmas under the same conditions. The composition of the deposited FC films is correlated to the nature and relative concentrations of nascent ions previously measured in these plasma systems using plasma ion mass spectrometry.

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Section: A C 3 Fmentioning

confidence: 99%

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Martin

Malkov

Butoi

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…28 A 30 nm film of a-C:H and a 30 nm silicon-rich sub-oxide layer improved adhesion even more. 44,45 XPS data shows that the appearance of Si-CC 1s band correlates with improved adhesion. 44 Other work shows that a SiC adhesion layer works with moderate success.…”

Section: B Microstructure Relatedmentioning

confidence: 93%

“…44,45 XPS data shows that the appearance of Si-CC 1s band correlates with improved adhesion. 44 Other work shows that a SiC adhesion layer works with moderate success. 46…”

Section: B Microstructure Relatedmentioning

confidence: 93%

“…Much work has been done to improve adhesion to the point where a-C:F,H can be incorporated into most film stacks. 28,44,45 The most promising approach is to use deposited adhesion layers. It has been found that while HDPCVD a-C:F,H does not adhere to SiO 2 , nor does SiO 2 adhere to a-C:F,H, some success can be achieved by using a 30 nm a-C:H film on either side of the a-C:F,H film.…”

Section: B Microstructure Relatedmentioning

confidence: 99%

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Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Theil

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The need to substitute SiO2 with low dielectric constant (κ) materials increases with each complementary metal–oxide–semiconductor process generation as interconnect RC delay, crosstalk, and power dissipation play an ever larger role in high-performance integrated circuits. Fluorinated amorphous carbon films (a-C:F,H) with low-κ properties (κ∼2.0–2.4) deposited by plasma-assisted chemical vapor deposition (CVD) techniques provide several advantages including low temperature processing, good gap fill capabilities, minimal moisture absorption, and simple implementation. Several deposition techniques have been examined, including high-density plasma and parallel-plate plasma-assisted CVD. In each case, it is possible to deposit a-C:F,H films with widely varying properties, such as κ and thermal stability. This has led to a good deal of confusion as to what is required to produce useful material. Results from many different sources are examined to develop a coherent picture of the relationships between deposition techniques, microstructural features, and macroscopic properties, and to summarize the scientific and technical challenges that remain for a-C:F,H implementation. The relationships between film deposition parameters such as applied substrate bias and film properties are presented in the discussion. In addition, x-ray photoelectron spectroscopy and network constraint theory are used to develop connections between microstructural and macroscopic properties, as well as to show how deposition parameters can be used to create a predictive model. This will demonstrate what process parameters are important in film formation. Finally, efforts to incorporate this material into integrated circuits, as well as measurements of the reliability and performance will be reviewed.

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“…[1][2][3][4] Silicon dioxide (SiO 2 ) is one of the commonly used dielectrics for III-V semiconductor devices. Numerous methods have been used to successfully deposit SiO 2 films, such as low-pressure chemical vapor deposition (LPCVD), 5 plasma-enhanced chemical vapor deposition (PECVD), 6,7 electron cyclotron resonance chemical vapor deposition (ECR-CVD), 8 sputtering, 9 rapid thermal oxidation (RTO), 10 and liquid phase deposition (LPD). 11,12 Compared with other methods, LPD is a low-cost and low-temperature process.…”

mentioning

confidence: 99%

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric

Lee

2012

ECS J. Solid State Sci. Technol.

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This study describes AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOSPHEMTs) with a liquid phase deposited SiO 2 (LPD-SiO 2 ) as the gate dielectric. Compared to its counterpart PHEMT, the AlGaAs/InGaAs MOS-PHEMT exhibits a larger gate bias operation, a higher breakdown voltage, a lower subthreshold current, and an improved gate leakage current with an effectively suppressed impact ionization effect. Consequently, LPD-SiO 2 may also be used as gate oxides and as effective passivation on III-V compound semiconductor devices.InGaAs-channel transistors, such as pseudomorphic highelectronic-mobility transistors (PHEMTs), are useful for achieving enhanced electron mobility. Recent progress in AlGaAs/InGaAs PHEMTs with a low Al-content AlGaAs Schottky layer grown on top of an InGaAs channel has shown promising features and performance in communication systems and for commercial purposes. However, the main issues of Schottky-based devices are limited gate voltage swing, lower breakdown voltage, and higher gate leakage current. Insulators are commonly chosen for growth on the III-V compound semiconductor to fabricate the metal-oxide-semiconductor (MOS) gate with a larger gate swing voltage and lower leakage current. [1][2][3][4] Silicon dioxide (SiO 2 ) is one of the commonly used dielectrics for III-V semiconductor devices. Numerous methods have been used to successfully deposit SiO 2 films, such as low-pressure chemical vapor deposition (LPCVD), 5 plasma-enhanced chemical vapor deposition (PECVD), 6,7 electron cyclotron resonance chemical vapor deposition (ECR-CVD), 8 sputtering, 9 rapid thermal oxidation (RTO), 10 and liquid phase deposition (LPD). 11,12 Compared with other methods, LPD is a low-cost and low-temperature process. In addition, neither anodic equipment nor an assisting energy source is required in the LPD system. Our previous studies have shown LPD-SiO 2 on Si, 13 GaAs, 14 GaN, 15 and AlGaAs. 16 Based on our experiments, however, the LPDSiO 2 method is unsuitable for certain types of semiconductor materials, as shown in Table I, which limits further device applications. In this study, the 1×100 μm 2 AlGaAs/InGaAs MOS-PHEMT with an LPD-SiO 2 as a gate dielectric was fabricated and direct-current (dc) characteristics were discussed. ExperimentalThe proposed device structures were grown by metal-organic chemical vapor deposition (MOCVD) on a semi-insulating GaAs substrate. The buffer layer consists of 100 nm undoped GaAs, followed by 250 nm undoped Al 0.2 Ga 0.8 As followed by 60 nm GaAs. A 10 nm Al 0.2 Ga 0.8 As with a Si doping density of 4.5 × 10 17 cm −3 and a 2 nm undoped Al 0.2 Ga 0.8 As spacer layer were then grown on the buffer layer, followed by a 14 nm undoped In 0.15 Ga 0.85 As channel layer, a 2 nm undoped Al 0.2 Ga 0.8 As spacer layer, a 18 nm Al 0.2 Ga 0.8 As donor layer with a Si doping density of 1.2×10 18 cm −3 , a 70 nm Al 0.2 Ga 0.8 As Schottky layer with a Si doping density of 1 × 10 17 cm −3 , and a 60 nm GaAs cap layer. Hall measurements sho...

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Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Cited by 14 publications

References 6 publications

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric

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Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Cited by 14 publications

References 6 publications

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Comparison of pulsed and downstream deposition of fluorocarbon materials from C3F8 and c-C4F8 plasmas

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO2as the Gate Dielectric

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Product

Resources

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Improved Impact Ionization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO₂as the Gate Dielectric